Vliv technologických podmínek na mechanické pnutí v diamantu podobných vrstvách

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F05%3A00014248" target="_blank" >RIV/00216224:14310/05:00014248 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26210/05:PU54692

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of technological conditions on mechanical stresses inside diamond-like carbon films

Popis výsledku v původním jazyce

In this paper the influences of the technological conditions, i.e. the influences of the hydrogen flow rate and deposition time, on the values of the intrinsic mechanical stresses inside the diamond-like carbon (DLC) thin films prepared by plasma enhanced chemical vapor deposition onto silicon substrates are studied. These stresses are measured by two-beam interferometry and optical profilometry based on chromatic aberration through the measurements of deformations of the silicon substrates originatingin consequence of the film stresses. It is shown that the influence of the deposition time (i.e. film thickness) on the film stress is relatively slight in contrast to the influence of the hydrogen flow rate on this quantity. It is namely shown that thefilm stresses are influenced by the hydrogen flow rate values in a pronounced way within the interval of interest, i.e. within the interval 1-7 sccm. Moreover, it is shown that the method of optical profilometry used can be competitive to

Název v anglickém jazyce

Influence of technological conditions on mechanical stresses inside diamond-like carbon films

Popis výsledku anglicky

In this paper the influences of the technological conditions, i.e. the influences of the hydrogen flow rate and deposition time, on the values of the intrinsic mechanical stresses inside the diamond-like carbon (DLC) thin films prepared by plasma enhanced chemical vapor deposition onto silicon substrates are studied. These stresses are measured by two-beam interferometry and optical profilometry based on chromatic aberration through the measurements of deformations of the silicon substrates originatingin consequence of the film stresses. It is shown that the influence of the deposition time (i.e. film thickness) on the film stress is relatively slight in contrast to the influence of the hydrogen flow rate on this quantity. It is namely shown that thefilm stresses are influenced by the hydrogen flow rate values in a pronounced way within the interval of interest, i.e. within the interval 1-7 sccm. Moreover, it is shown that the method of optical profilometry used can be competitive to

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GA101%2F04%2F2131" target="_blank" >GA101/04/2131: Realizace laboratorního digitálního spektrofotometru pro širokou spektrální oblast</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2005

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

—

Svazek periodika

14

Číslo periodika v rámci svazku

11-12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

1835-1838

Kód UT WoS článku

—

EID výsledku v databázi Scopus

—