Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F09%3A00030131" target="_blank" >RIV/00216224:14310/09:00030131 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216275:25310/09:00008507 RIV/00216305:26210/09:PU85279

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films

Popis výsledku v původním jazyce

The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disorde

Název v anglickém jazyce

Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films

Popis výsledku anglicky

The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disorde

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/FT-TA3%2F142" target="_blank" >FT-TA3/142: Analýza optických vlastností solárních článků.</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Optoelectronics and Advanced Materials

ISSN

1454-4164

e-ISSN

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Svazek periodika

11

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

RO - Rumunsko

Počet stran výsledku

8

Strana od-do

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Kód UT WoS článku

ISI:00027349080

EID výsledku v databázi Scopus

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