Application of UV Irradiation in Removal of Post-etch 193 nm Photoresist

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F09%3A00038401" target="_blank" >RIV/00216224:14310/09:00038401 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Application of UV Irradiation in Removal of Post-etch 193 nm Photoresist

Popis výsledku v původním jazyce

This study focused on the effect of UV irradiation on modification of polymethyl methacrylate-based photoresist, and then on wet photoresist (PR) removal of patterned structure (single damascene structure). Three single-wavelength UV sources were considered for PR treatment, with lambda = 172, 222, and 283 nm. Modification of blanket PR was characterized using Fourier-transform infrared spectroscopy (FTIR; chemical change), spectroscopic ellipsometry (SE; thickness change), and dissolution in organic solvent (solubility change). While for patterned samples, scanning electron microscopy (SEM) was used for evaluation of cleaning efficiency. In comparison to 172 nm, the PR film irradiated by 222 nm and 283 nm photons resulted in formation of higher concentration in C=C bond. Immersion tests using pure N-methyl pyrrolidone (NMP) at 60 C for 2 min showed that some improvement in PR removal was only observed for PR films treated by 283 nm UV for short irradiation times.

Název v anglickém jazyce

Application of UV Irradiation in Removal of Post-etch 193 nm Photoresist

Popis výsledku anglicky

This study focused on the effect of UV irradiation on modification of polymethyl methacrylate-based photoresist, and then on wet photoresist (PR) removal of patterned structure (single damascene structure). Three single-wavelength UV sources were considered for PR treatment, with lambda = 172, 222, and 283 nm. Modification of blanket PR was characterized using Fourier-transform infrared spectroscopy (FTIR; chemical change), spectroscopic ellipsometry (SE; thickness change), and dissolution in organic solvent (solubility change). While for patterned samples, scanning electron microscopy (SEM) was used for evaluation of cleaning efficiency. In comparison to 172 nm, the PR film irradiated by 222 nm and 283 nm photons resulted in formation of higher concentration in C=C bond. Immersion tests using pure N-methyl pyrrolidone (NMP) at 60 C for 2 min showed that some improvement in PR removal was only observed for PR films treated by 283 nm UV for short irradiation times.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Materials Research Society Symposium Proceedings

ISBN

978-1-60511-129-2

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

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Název nakladatele

Materials Research Society Symposium Proceedings

Místo vydání

Warrendale

Místo konání akce

San Francisco

Datum konání akce

1. 1. 2009

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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