Effect of nitrogen incorporation on mechanical properties of DLC coatings on metallic substrates
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F10%3A00047540" target="_blank" >RIV/00216224:14310/10:00047540 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Effect of nitrogen incorporation on mechanical properties of DLC coatings on metallic substrates
Popis výsledku v původním jazyce
Diamond-like carbon (DLC) and hydrogenated amorphous carbon (a-C:H) films has grown enormously due to their particular and useful properties such as their wide band gaps, high thermal conductivities, high hardness and low friction coefficient. However, there are some technical difficulties in their preparation especially on metallic substrates, where the adhesion is poor. Diamond-like carbon (amorphous hydrogenated carbon: a-C:H) films doped with different amount of nitrogen were deposited by plasma enhanced chemical vapor deposition (PECVD) using capacitively coupled rf discharge (13.56 or 27.12 MHz) in the mixture of CH4/H2/N2 on silicon, glass and metallic substrates. The pressure was maintained below 20 Pa. DC self-bias and gas feed composition parameters were used for modification of the mechanical properties, adhesion to different substrates, chemical composition and structure of the deposited films.
Název v anglickém jazyce
Effect of nitrogen incorporation on mechanical properties of DLC coatings on metallic substrates
Popis výsledku anglicky
Diamond-like carbon (DLC) and hydrogenated amorphous carbon (a-C:H) films has grown enormously due to their particular and useful properties such as their wide band gaps, high thermal conductivities, high hardness and low friction coefficient. However, there are some technical difficulties in their preparation especially on metallic substrates, where the adhesion is poor. Diamond-like carbon (amorphous hydrogenated carbon: a-C:H) films doped with different amount of nitrogen were deposited by plasma enhanced chemical vapor deposition (PECVD) using capacitively coupled rf discharge (13.56 or 27.12 MHz) in the mixture of CH4/H2/N2 on silicon, glass and metallic substrates. The pressure was maintained below 20 Pa. DC self-bias and gas feed composition parameters were used for modification of the mechanical properties, adhesion to different substrates, chemical composition and structure of the deposited films.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
BL - Fyzika plasmatu a výboje v plynech
OECD FORD obor
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Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
Z - Vyzkumny zamer (s odkazem do CEZ)
Ostatní
Rok uplatnění
2010
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů