Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F11%3A00055052" target="_blank" >RIV/00216224:14310/11:00055052 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/pssc.201000301" target="_blank" >http://dx.doi.org/10.1002/pssc.201000301</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssc.201000301" target="_blank" >10.1002/pssc.201000301</a>

Jazyk výsledku

čeština

Název v původním jazyce

Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation

Popis výsledku v původním jazyce

Interaction of hydrogen and deuterium with radiation defects introduced by irradiation with high-energy alphas was investigated in the low-doped float zone and Czochralski silicon forming the base of p+nn+ diodes. To create localized defect layer, diodeswere first irradiated with 2.4 MeV alphas to a fluence of 1x1010 cm-2. Then, hydrogen or deuterium was introduced by rf plasma treatment at 250 C and diodes were isochronally annealed at temperatures ranging from 100 to 400 C. Reactions of hydrogen anddeuterium with radiation defects were monitored by deep-level transient spectroscopy. Results show that hydrogen rf plasma effectively neutralizes majority of vacancy related defects created by alpha-particle irradiation in both materials. In contrast with it, neutralization by deuterium plasma is substantially weaker. Disappearing of vacancy-related defect levels due to hydrogen (deuterium) is accompanied by introduction of two dominant deep levels at EC-0.309 eV and EC-0.365 eV.

Název v anglickém jazyce

Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation

Popis výsledku anglicky

Interaction of hydrogen and deuterium with radiation defects introduced by irradiation with high-energy alphas was investigated in the low-doped float zone and Czochralski silicon forming the base of p+nn+ diodes. To create localized defect layer, diodeswere first irradiated with 2.4 MeV alphas to a fluence of 1x1010 cm-2. Then, hydrogen or deuterium was introduced by rf plasma treatment at 250 C and diodes were isochronally annealed at temperatures ranging from 100 to 400 C. Reactions of hydrogen anddeuterium with radiation defects were monitored by deep-level transient spectroscopy. Results show that hydrogen rf plasma effectively neutralizes majority of vacancy related defects created by alpha-particle irradiation in both materials. In contrast with it, neutralization by deuterium plasma is substantially weaker. Disappearing of vacancy-related defect levels due to hydrogen (deuterium) is accompanied by introduction of two dominant deep levels at EC-0.309 eV and EC-0.365 eV.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

physica status solidi (c)

ISSN

1862-6351

e-ISSN

—

Svazek periodika

8

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

4

Strana od-do

948-951

Kód UT WoS článku

000301537100074

EID výsledku v databázi Scopus

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