Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00183039" target="_blank" >RIV/68407700:21230/11:00183039 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.scientific.net/SSP.178-179.398" target="_blank" >http://www.scientific.net/SSP.178-179.398</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.178-179.398" target="_blank" >10.4028/www.scientific.net/SSP.178-179.398</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

Popis výsledku v původním jazyce

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 degC. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided intotwo groups. The Pt and Pd form deep levels in increased extent at the presence of radiation defects above 600 degC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC - 0.203 eV) and donor level V0/+ (EC - 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. Theyeasily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 degC.

Název v anglickém jazyce

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

Popis výsledku anglicky

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 degC. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided intotwo groups. The Pt and Pd form deep levels in increased extent at the presence of radiation defects above 600 degC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC - 0.203 eV) and donor level V0/+ (EC - 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. Theyeasily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 degC.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

<a href="/cs/project/LC06041" target="_blank" >LC06041: Příprava, modifikace a charakterizace materiálů energetickým zářením</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solid State Phenomena

ISSN

1012-0394

e-ISSN

—

Svazek periodika

178-179

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

421-426

Kód UT WoS článku

—

EID výsledku v databázi Scopus

—