Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F13%3A00070881" target="_blank" >RIV/00216224:14310/13:00070881 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1134/S1023193513070033" target="_blank" >http://dx.doi.org/10.1134/S1023193513070033</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S1023193513070033" target="_blank" >10.1134/S1023193513070033</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus

Popis výsledku v původním jazyce

The study of polycrystalline CeO2 + xSm2O3 (x = 0, 10.9?15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EBPVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature Tdep and Ar+ ion bombardment, on the (micro)hardness, Hpl and elastic modulus,Y with respect to the film structure and microstructure. These mechanical characteristics were investigated bythe instrumented indentation technique as the functions of relative indentation depth hrel = hmax/t and the values obtained were compared with those obtained by the classical Vickers technique. Results of this study are described and discussed.

Název v anglickém jazyce

Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus

Popis výsledku anglicky

The study of polycrystalline CeO2 + xSm2O3 (x = 0, 10.9?15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EBPVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature Tdep and Ar+ ion bombardment, on the (micro)hardness, Hpl and elastic modulus,Y with respect to the film structure and microstructure. These mechanical characteristics were investigated bythe instrumented indentation technique as the functions of relative indentation depth hrel = hmax/t and the values obtained were compared with those obtained by the classical Vickers technique. Results of this study are described and discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Russian Journal of Electrochemistry

ISSN

1023-1935

e-ISSN

—

Svazek periodika

49

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

RU - Ruská federace

Počet stran výsledku

9

Strana od-do

619-627

Kód UT WoS článku

000321773800003

EID výsledku v databázi Scopus

2-s2.0-84880256641