Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD ( plus IBAD) methods. Relationship between investigated film and substrate at indentation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14410%2F15%3A00086919" target="_blank" >RIV/00216224:14410/15:00086919 - isvavai.cz</a>

Výsledek na webu

<a href="http://link.springer.com/article/10.1134%2FS102319351506004X" target="_blank" >http://link.springer.com/article/10.1134%2FS102319351506004X</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S102319351506004X" target="_blank" >10.1134/S102319351506004X</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD ( plus IBAD) methods. Relationship between investigated film and substrate at indentation

Popis výsledku v původním jazyce

The study of polycrystalline CeO2 + xSm(2)O(3) (x = 0, 10.9-15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature T (dep) and Ar+ ion bombardment as well as the structure and (micro)structure on the (micro)hardness H using the differential hardness, Hdif, as a parameter. The investigations were made using, as in our recent papers, the depth sensing indentation (DSI) technique. The study was focused on the depth dependence of the film/substrate system response on the indentation response from the surface of films up to the film/substrate interface.

Název v anglickém jazyce

Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD ( plus IBAD) methods. Relationship between investigated film and substrate at indentation

Popis výsledku anglicky

The study of polycrystalline CeO2 + xSm(2)O(3) (x = 0, 10.9-15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature T (dep) and Ar+ ion bombardment as well as the structure and (micro)structure on the (micro)hardness H using the differential hardness, Hdif, as a parameter. The investigations were made using, as in our recent papers, the depth sensing indentation (DSI) technique. The study was focused on the depth dependence of the film/substrate system response on the indentation response from the surface of films up to the film/substrate interface.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

50301 - Education, general; including training, pedagogy, didactics [and education systems]

Projekt

<a href="/cs/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: CEITEC - central european institute of technology</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Russian Journal of Electrochemistry

ISSN

1023-1935

e-ISSN

—

Svazek periodika

51

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

495-502

Kód UT WoS článku

000356494600001

EID výsledku v databázi Scopus

2-s2.0-84935880228