Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F19%3A00111214" target="_blank" >RIV/00216224:14310/19:00111214 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.2478/jee-2019-0037" target="_blank" >https://doi.org/10.2478/jee-2019-0037</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2478/jee-2019-0037" target="_blank" >10.2478/jee-2019-0037</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films

Popis výsledku v původním jazyce

In this paper the overview of the most important approximate methods for the optical characterization of inhomogeneous thin films is presented. The following approximate methods are introduced: Wentzel-Kramers-Brillouin-Jeffreys approximation, method based on substituting inhomogeneous thin films by multilayer systems, method based on modifying recursive approach and method utilizing multiple-beam interference model. Principles and mathematical formulations of these methods are described. A comparison of these methods is carried out from the practical point of view, ie advantages and disadvantages of individual methods are discussed. Examples of the optical characterization of three inhomogeneous thin films consisting of non-stoichiometric silicon nitride are introduced in order to illustrate efficiency and practical meaning of the presented approximate methods.

Název v anglickém jazyce

Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films

Popis výsledku anglicky

In this paper the overview of the most important approximate methods for the optical characterization of inhomogeneous thin films is presented. The following approximate methods are introduced: Wentzel-Kramers-Brillouin-Jeffreys approximation, method based on substituting inhomogeneous thin films by multilayer systems, method based on modifying recursive approach and method utilizing multiple-beam interference model. Principles and mathematical formulations of these methods are described. A comparison of these methods is carried out from the practical point of view, ie advantages and disadvantages of individual methods are discussed. Examples of the optical characterization of three inhomogeneous thin films consisting of non-stoichiometric silicon nitride are introduced in order to illustrate efficiency and practical meaning of the presented approximate methods.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/LO1411" target="_blank" >LO1411: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electrical Engineering

ISSN

1335-3632

e-ISSN

1339-309X

Svazek periodika

70

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

SK - Slovenská republika

Počet stran výsledku

11

Strana od-do

16-26

Kód UT WoS článku

000489301300002

EID výsledku v databázi Scopus

2-s2.0-85073451699