Optical properties of silver doped amorphous films of composition Ge(28)S(72) and Ge(22)Ga(6)S(72)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F11%3A39894542" target="_blank" >RIV/00216275:25310/11:39894542 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389013:_____/11:00371536

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Optical properties of silver doped amorphous films of composition Ge(28)S(72) and Ge(22)Ga(6)S(72)

Popis výsledku v původním jazyce

Thin films of Ge(28)S(72) and Ge(22)Ga(6)S(72) prepared by pulsed laser deposition were doped with silver in three steps. Each step includes deposition of a 10 nm thick silver thin film by thermal evaporation and its dissolution into chalcogenide thin films by photodiffusion. Undoped and doped thin films were characterized by using a Spectral ellipsometer VASE, a UV/VIS spectrometer, X-Ray diffraction analysis and Energy dispersive X-Ray analysis but only optical characterization is present in this paper. Substitution of Ge by atoms Ga leads into increasing of the refractive index and the red shift of short-wavelength cut-off edge. Adding silver leads to another increase of the refractive index and the red shift of short-wavelength cut-off edge. Due tohigh thickness of chalcogenide thin films (at least 500 nm) such amount of silver was not sufficient for creating homogenous thin films and thin films with a graded refractive index were created

Název v anglickém jazyce

Optical properties of silver doped amorphous films of composition Ge(28)S(72) and Ge(22)Ga(6)S(72)

Popis výsledku anglicky

Thin films of Ge(28)S(72) and Ge(22)Ga(6)S(72) prepared by pulsed laser deposition were doped with silver in three steps. Each step includes deposition of a 10 nm thick silver thin film by thermal evaporation and its dissolution into chalcogenide thin films by photodiffusion. Undoped and doped thin films were characterized by using a Spectral ellipsometer VASE, a UV/VIS spectrometer, X-Ray diffraction analysis and Energy dispersive X-Ray analysis but only optical characterization is present in this paper. Substitution of Ge by atoms Ga leads into increasing of the refractive index and the red shift of short-wavelength cut-off edge. Adding silver leads to another increase of the refractive index and the red shift of short-wavelength cut-off edge. Due tohigh thickness of chalcogenide thin films (at least 500 nm) such amount of silver was not sufficient for creating homogenous thin films and thin films with a graded refractive index were created

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Optoelectronics and Advanced Materials

ISSN

1454-4164

e-ISSN

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Svazek periodika

13

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

RO - Rumunsko

Počet stran výsledku

5

Strana od-do

1442-1446

Kód UT WoS článku

000298834200015

EID výsledku v databázi Scopus

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