Optical and electrical properties of Sb-rich Sb-Se system thin films for phase change memories

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39896000" target="_blank" >RIV/00216275:25310/12:39896000 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Optical and electrical properties of Sb-rich Sb-Se system thin films for phase change memories

Popis výsledku v původním jazyce

Materials for phase change memories with better parameters than those, which are already commercially used have been intensively searched. The Sb-rich Sb-Se materials studied in this paper are potential candidates for such a purpose. The bulk samples ofcomposition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps of amorphous films were from the range 0.28 to 0.35 eV. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 (? = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. They increased with increasing content of antimony. The values of sheet electrical resistance of as-deposited thin films were about 106 ?/sqr. and 102 ?/sqr. for crystalline films. The crystallization temperature was found in the range 160 170°C and it increased

Název v anglickém jazyce

Optical and electrical properties of Sb-rich Sb-Se system thin films for phase change memories

Popis výsledku anglicky

Materials for phase change memories with better parameters than those, which are already commercially used have been intensively searched. The Sb-rich Sb-Se materials studied in this paper are potential candidates for such a purpose. The bulk samples ofcomposition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps of amorphous films were from the range 0.28 to 0.35 eV. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 (? = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. They increased with increasing content of antimony. The values of sheet electrical resistance of as-deposited thin films were about 106 ?/sqr. and 102 ?/sqr. for crystalline films. The crystallization temperature was found in the range 160 170°C and it increased

Druh

O - Ostatní výsledky

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů