Physico-chemical properties of Sb-rich Sb-Se system thin films for phase change memories
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39896001" target="_blank" >RIV/00216275:25310/12:39896001 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Physico-chemical properties of Sb-rich Sb-Se system thin films for phase change memories
Popis výsledku v původním jazyce
The bulk samples of composition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 (? = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. Activation energies of electrical conductivity of as-deposited films were in range 0.27 0.29 eV and they increased with increasing content of selenium. Large changes of optical reflectivity and electrical resistance due to crystallization showed that these materials can be potentially applied as active parts for data storage cells.
Název v anglickém jazyce
Physico-chemical properties of Sb-rich Sb-Se system thin films for phase change memories
Popis výsledku anglicky
The bulk samples of composition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 (? = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. Activation energies of electrical conductivity of as-deposited films were in range 0.27 0.29 eV and they increased with increasing content of selenium. Large changes of optical reflectivity and electrical resistance due to crystallization showed that these materials can be potentially applied as active parts for data storage cells.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
CA - Anorganická chemie
OECD FORD obor
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Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2012
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů