Physico-chemical properties of Sb-rich (Sb, In) - Te thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F14%3A39898379" target="_blank" >RIV/00216275:25310/14:39898379 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jallcom.2014.07.110" target="_blank" >http://dx.doi.org/10.1016/j.jallcom.2014.07.110</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jallcom.2014.07.110" target="_blank" >10.1016/j.jallcom.2014.07.110</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Physico-chemical properties of Sb-rich (Sb, In) - Te thin films

Popis výsledku v původním jazyce

The phase change materials of the system Sb70?xInxTe30 (x = 0, 7 and 14) were studied. The thin films prepared by thermal flash evaporation were amorphous with high electrical sheet resistance (Rs) (?106 omega/sqr., T = 300 K). When heated, the resistance dropped to 10-102 omega/sqr. due to crystallization of the films. The crystallization temperatures were 113, 158 and 183 °C for Sb70Te30, Sb63In7Te30 and Sb56In14Te30, respectively. The activation energies of crystallization as evaluated by Kissinger'splot were 2.42, 2.72 and 3.15 eV for Sb70Te30, Sb63In7Te30 and Sb56In14Te30, respectively. The optical band gap of amorphous films increases with increasing content of indium from 0.38 to 0.47 eV. Values of refractive index were found in range of 5.43-4.77 (lambda = 1500 nm) for amorphous state and 7.06-5.89 for crystalline state in dependence on composition. They decreased with increasing content of indium.

Název v anglickém jazyce

Physico-chemical properties of Sb-rich (Sb, In) - Te thin films

Popis výsledku anglicky

The phase change materials of the system Sb70?xInxTe30 (x = 0, 7 and 14) were studied. The thin films prepared by thermal flash evaporation were amorphous with high electrical sheet resistance (Rs) (?106 omega/sqr., T = 300 K). When heated, the resistance dropped to 10-102 omega/sqr. due to crystallization of the films. The crystallization temperatures were 113, 158 and 183 °C for Sb70Te30, Sb63In7Te30 and Sb56In14Te30, respectively. The activation energies of crystallization as evaluated by Kissinger'splot were 2.42, 2.72 and 3.15 eV for Sb70Te30, Sb63In7Te30 and Sb56In14Te30, respectively. The optical band gap of amorphous films increases with increasing content of indium from 0.38 to 0.47 eV. Values of refractive index were found in range of 5.43-4.77 (lambda = 1500 nm) for amorphous state and 7.06-5.89 for crystalline state in dependence on composition. They decreased with increasing content of indium.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/EE2.3.20.0254" target="_blank" >EE2.3.20.0254: Výzkumný tým pro pokročilé nekrystalické materiály</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Alloys and Compounds

ISSN

0925-8388

e-ISSN

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Svazek periodika

617

Číslo periodika v rámci svazku

December

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

4

Strana od-do

306-309

Kód UT WoS článku

000344135800052

EID výsledku v databázi Scopus

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