Ga-Ge-Te amorphous thin films fabricated by pulsed laser deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F13%3A39896411" target="_blank" >RIV/00216275:25310/13:39896411 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S0040609013002150" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0040609013002150</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2013.01.096" target="_blank" >10.1016/j.tsf.2013.01.096</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ga-Ge-Te amorphous thin films fabricated by pulsed laser deposition

Popis výsledku v původním jazyce

UV pulsed laser deposition was employed for the fabrication of amorphous Ga-Ge-Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe4], eventually [GaTe4] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experimentsshowed all Ga-Ge-Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga10Ge15Te75. This particular composition was further studied from thepoint of view of thermal stability and stability against ageing in as-deposited state.

Název v anglickém jazyce

Ga-Ge-Te amorphous thin films fabricated by pulsed laser deposition

Popis výsledku anglicky

UV pulsed laser deposition was employed for the fabrication of amorphous Ga-Ge-Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe4], eventually [GaTe4] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experimentsshowed all Ga-Ge-Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga10Ge15Te75. This particular composition was further studied from thepoint of view of thermal stability and stability against ageing in as-deposited state.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP106%2F11%2F0506" target="_blank" >GAP106/11/0506: Pulzní laserová depozice amorfních tenkých vrstev</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

531

Číslo periodika v rámci svazku

15th March

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

454-459

Kód UT WoS článku

000316677900071

EID výsledku v databázi Scopus

—