Photosensitivity of pulsed laser deposited Ge-Sb-Se thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F15%3A39899380" target="_blank" >RIV/00216275:25310/15:39899380 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1364/OME.5.000781" target="_blank" >http://dx.doi.org/10.1364/OME.5.000781</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1364/OME.5.000781" target="_blank" >10.1364/OME.5.000781</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Photosensitivity of pulsed laser deposited Ge-Sb-Se thin films

Popis výsledku v původním jazyce

Pulsed laser deposition was used to prepare amorphous thin films from (GeSe2)(100-x) (Sb2Se3)(x) system, where x is varying from 0 to 60. To study their photosensitivity under irradiation with energy close to band gap, a comparison of their optical properties (refractive index and band gap energy) before and after irradiation is performed in both, as-deposited and annealed states. In linear regime, annealed films seem to be photostable when x }= 30. In nonlinear regime, highest photoinduced threshold intensity values were found for films with x = 10, 16.7 and x = 30, 40. Thus, the highest photostability in both, linear and nonlinear regimes of irradiation, was observed for layers with x = 30 and 40. The structure of the films is discussed based on Raman scattering spectroscopy results.

Název v anglickém jazyce

Photosensitivity of pulsed laser deposited Ge-Sb-Se thin films

Popis výsledku anglicky

Pulsed laser deposition was used to prepare amorphous thin films from (GeSe2)(100-x) (Sb2Se3)(x) system, where x is varying from 0 to 60. To study their photosensitivity under irradiation with energy close to band gap, a comparison of their optical properties (refractive index and band gap energy) before and after irradiation is performed in both, as-deposited and annealed states. In linear regime, annealed films seem to be photostable when x }= 30. In nonlinear regime, highest photoinduced threshold intensity values were found for films with x = 10, 16.7 and x = 30, 40. Thus, the highest photostability in both, linear and nonlinear regimes of irradiation, was observed for layers with x = 30 and 40. The structure of the films is discussed based on Raman scattering spectroscopy results.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JH - Keramika, žáruvzdorné materiály a skla

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials Express

ISSN

2159-3930

e-ISSN

—

Svazek periodika

5

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

781-793

Kód UT WoS článku

000352293100013

EID výsledku v databázi Scopus

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