Enhanced Thermoelectric Performance of n-type Bi2O2Se Ceramics Induced by Ge Doping

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F18%3A39911018" target="_blank" >RIV/00216275:25310/18:39911018 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389013:_____/18:00484654

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s11664-017-5952-4" target="_blank" >https://link.springer.com/article/10.1007/s11664-017-5952-4</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11664-017-5952-4" target="_blank" >10.1007/s11664-017-5952-4</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Enhanced Thermoelectric Performance of n-type Bi2O2Se Ceramics Induced by Ge Doping

Popis výsledku v původním jazyce

Ceramic samples with the composition Bi2xGexO2Se1.01 (x = 0, 0.05, 0.075,and 0.1) were synthesized by solid-state reaction and compacted using a hotpressing technique. The prepared materials were characterized by x-ray diffraction analysis, electron microscopy, and measurements of electrical conductivity, Seebeck coefficient S, and thermal conductivity in the temperature range 300–780 K. Ge in the Bi2O2Se host structure led to an increase of the free electron concentration compared to pristine Bi2O2Se1.01. The donor effect is attributed to point substitutional defects in the Bi sublattice, and oxygen vacancies producing free electrons. As a result, we observe an increase in the electrical conductivity and decrease in Seebeck coefficient while thermal conductivity changes slightly. The highest value of the dimensionless figure of merit ZT reaches 0.25 for the composition Bi1.95Ge0.05O2Se1.01 at T = 723 K, which is, to date, the highest ZT value reported for Bi2O2Se ceramics. Our results suggest that Bi2O2Se is still worth exploring.

Název v anglickém jazyce

Enhanced Thermoelectric Performance of n-type Bi2O2Se Ceramics Induced by Ge Doping

Popis výsledku anglicky

Ceramic samples with the composition Bi2xGexO2Se1.01 (x = 0, 0.05, 0.075,and 0.1) were synthesized by solid-state reaction and compacted using a hotpressing technique. The prepared materials were characterized by x-ray diffraction analysis, electron microscopy, and measurements of electrical conductivity, Seebeck coefficient S, and thermal conductivity in the temperature range 300–780 K. Ge in the Bi2O2Se host structure led to an increase of the free electron concentration compared to pristine Bi2O2Se1.01. The donor effect is attributed to point substitutional defects in the Bi sublattice, and oxygen vacancies producing free electrons. As a result, we observe an increase in the electrical conductivity and decrease in Seebeck coefficient while thermal conductivity changes slightly. The highest value of the dimensionless figure of merit ZT reaches 0.25 for the composition Bi1.95Ge0.05O2Se1.01 at T = 723 K, which is, to date, the highest ZT value reported for Bi2O2Se ceramics. Our results suggest that Bi2O2Se is still worth exploring.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA16-07711S" target="_blank" >GA16-07711S: Systematická studie vlivu výšky Schottkyho bariéry na energetické filtrování elektronů v termoelektrických nanokompozitech.</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

—

Svazek periodika

47

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

8

Strana od-do

1459-1466

Kód UT WoS článku

000419791800069

EID výsledku v databázi Scopus

2-s2.0-85034658332