Local topographical changes of Ge-(Sb)-Se thin films induced by direct electron beam writing

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F25%3A39923388" target="_blank" >RIV/00216275:25310/25:39923388 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.ceramint.2025.03.128" target="_blank" >https://doi.org/10.1016/j.ceramint.2025.03.128</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.ceramint.2025.03.128" target="_blank" >10.1016/j.ceramint.2025.03.128</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Local topographical changes of Ge-(Sb)-Se thin films induced by direct electron beam writing

Popis výsledku v původním jazyce

Local topographical changes are studied in Ge-Se and Ge-Sb-Se thin films induced by focused electron beam exposure. The results show that under comparable experimental conditions, the Ge29.2Se70.8 film undergoes expansion, while in Ge-Sb-Se compositions (Ge17.9Sb16.6Se65.5, Ge11.4Sb22.9Se65.7), the material is preferentially removed instead. Variations in electron beam parameters, including exposure time, spot size, and magnification, as well as the thermodynamic state of the thin films (virgin vs. annealed), are studied to characterize their influence on material response (height/depth of micro-objects). Force spectroscopy (FS), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and digital holographic microscopy (DHM) are used to characterize the micro-objects created and to identify possible changes in stiffness and chemical composition of the films studied. Observed findings demonstrate that electron beam direct writing can be used to locally modify the surface of Ge-(Sb)-Se thin films, enabling the fabrication of micro-optical elements such as microlenses.

Název v anglickém jazyce

Local topographical changes of Ge-(Sb)-Se thin films induced by direct electron beam writing

Popis výsledku anglicky

Local topographical changes are studied in Ge-Se and Ge-Sb-Se thin films induced by focused electron beam exposure. The results show that under comparable experimental conditions, the Ge29.2Se70.8 film undergoes expansion, while in Ge-Sb-Se compositions (Ge17.9Sb16.6Se65.5, Ge11.4Sb22.9Se65.7), the material is preferentially removed instead. Variations in electron beam parameters, including exposure time, spot size, and magnification, as well as the thermodynamic state of the thin films (virgin vs. annealed), are studied to characterize their influence on material response (height/depth of micro-objects). Force spectroscopy (FS), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and digital holographic microscopy (DHM) are used to characterize the micro-objects created and to identify possible changes in stiffness and chemical composition of the films studied. Observed findings demonstrate that electron beam direct writing can be used to locally modify the surface of Ge-(Sb)-Se thin films, enabling the fabrication of micro-optical elements such as microlenses.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Ceramics International

ISSN

0272-8842

e-ISSN

1873-3956

Svazek periodika

51

Číslo periodika v rámci svazku

18

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

24450-24458

Kód UT WoS článku

001533667800001

EID výsledku v databázi Scopus

2-s2.0-86000720194