Growth of SiCAlN on Si(111) via a crystalline oxide interface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F02%3APU29571" target="_blank" >RIV/00216305:26210/02:PU29571 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Growth of SiCAlN on Si(111) via a crystalline oxide interface

Popis výsledku v původním jazyce

Growth of single-phase SiCAlN epitaxial films with the 2H-wurtzite structure is conducted directly on Si(111) despite the structural differences and large lattice mismatch (19%) between the two materials. Commensurate heteroepitaxy is facilitated by theconversion of native and thermally grown SiO2 layers on Si(111) into crystalline oxides by in situ reactions of the layers with Al atoms and the H3SiCN precursor, forming coherent interfaces with the Si substrate and the film. High-resolution transmissioon electron microscopy and electron energy-loss spectroscopy show that the amorphous SiO2 films are entirely transformed into a crystalline Si-Al-O-N framework in registry with the Si(111) surface. This crystalline interface acts as a template for nucleation and growth of epitaxial SiCAlN. Integration of wide-band-gap semiconductors with Si is readily achieved by this process. (C) 2002 American Institute of Physics.

Název v anglickém jazyce

Growth of SiCAlN on Si(111) via a crystalline oxide interface

Popis výsledku anglicky

Growth of single-phase SiCAlN epitaxial films with the 2H-wurtzite structure is conducted directly on Si(111) despite the structural differences and large lattice mismatch (19%) between the two materials. Commensurate heteroepitaxy is facilitated by theconversion of native and thermally grown SiO2 layers on Si(111) into crystalline oxides by in situ reactions of the layers with Al atoms and the H3SiCN precursor, forming coherent interfaces with the Si substrate and the film. High-resolution transmissioon electron microscopy and electron energy-loss spectroscopy show that the amorphous SiO2 films are entirely transformed into a crystalline Si-Al-O-N framework in registry with the Si(111) surface. This crystalline interface acts as a template for nucleation and growth of epitaxial SiCAlN. Integration of wide-band-gap semiconductors with Si is readily achieved by this process. (C) 2002 American Institute of Physics.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2002

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

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Svazek periodika

81

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

3

Strana od-do

2181-2183

Kód UT WoS článku

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EID výsledku v databázi Scopus

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