Vyhodnocení kvality tlustovrstvových odporů pomocí měření šumu a nelinearity po namáhání vysokonapěťovým pulsem

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU45391" target="_blank" >RIV/00216305:26220/04:PU45391 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Non-linearity and noise characterisation of thick-film resistors after high voltage stress

Popis výsledku v původním jazyce

Experimental investigation on cermet thick film resistors shows, that non-linearity and 1/f noise spectral density is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and noise spectrral voltage density were measured before and after high voltage stress. Two mechanisms were observed. (i) Sample resistance, non-linearity and noise decreases after high voltage stressing. We suppose, that the effect of resistance, non-linearity and noise lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance, non-linearity and noise increases after high voltage stressing. We suppose tha

Název v anglickém jazyce

Non-linearity and noise characterisation of thick-film resistors after high voltage stress

Popis výsledku anglicky

Experimental investigation on cermet thick film resistors shows, that non-linearity and 1/f noise spectral density is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and noise spectrral voltage density were measured before and after high voltage stress. Two mechanisms were observed. (i) Sample resistance, non-linearity and noise decreases after high voltage stressing. We suppose, that the effect of resistance, non-linearity and noise lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance, non-linearity and noise increases after high voltage stressing. We suppose tha

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/ME%20605" target="_blank" >ME 605: Šum HEMT pro globální komunikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2004

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 3rd European Microelectronics and Packaging Symposium with Table Top Exhibition

ISBN

80-239-2835-X

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

421-426

Název nakladatele

IMAPS CZ&SK Chapter

Místo vydání

Lanskroun

Místo konání akce

Prague

Datum konání akce

16. 6. 2004

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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