Změna nelinearity způsobená proudovým namáháním v tlustovrstvových odporech

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU45416" target="_blank" >RIV/00216305:26220/04:PU45416 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Non-lineartiy changes induced by current stress in thick film resistors

Popis výsledku v původním jazyce

Non-linearity measurements are widely used for quality and reliability testing of passive components. The main non-linearity sources in the ruthenium based thick film resistors are the transitions between conducting grains in the resistive paste volume,and the defects and cracks in the resistive layer and resistor/contact interface. The third harmonic voltage measurements are offered to investigate the effect of the degradation mechanism in thick film resistors after high current pulses. We applied to the resistors three short current pulses (t = 5 ms) with current density Jmax reaching 100times value of nominal current density JNom. This is sufficient to screen unstable devices. Third harmonic voltage (THV) and resistance were measured before and after the pulse stressing. We have found good correlation between relative change of THV and relative change of resistance, however THV measurements are about 5 times more sensitive. THV change after pulse stressing is proportional to the num

Název v anglickém jazyce

Non-lineartiy changes induced by current stress in thick film resistors

Popis výsledku anglicky

Non-linearity measurements are widely used for quality and reliability testing of passive components. The main non-linearity sources in the ruthenium based thick film resistors are the transitions between conducting grains in the resistive paste volume,and the defects and cracks in the resistive layer and resistor/contact interface. The third harmonic voltage measurements are offered to investigate the effect of the degradation mechanism in thick film resistors after high current pulses. We applied to the resistors three short current pulses (t = 5 ms) with current density Jmax reaching 100times value of nominal current density JNom. This is sufficient to screen unstable devices. Third harmonic voltage (THV) and resistance were measured before and after the pulse stressing. We have found good correlation between relative change of THV and relative change of resistance, however THV measurements are about 5 times more sensitive. THV change after pulse stressing is proportional to the num

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/ME%20605" target="_blank" >ME 605: Šum HEMT pro globální komunikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2004

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Capacitor and Resistor Technology

ISSN

0887-7491

e-ISSN

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Svazek periodika

2004

Číslo periodika v rámci svazku

24

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

154-158

Kód UT WoS článku

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EID výsledku v databázi Scopus

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