Vyhodnocení kvality tlustovrstvových odporů pomocí měření změny nelinearity a odporu po namáhání vysokonapěťovým pulsem

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU45408" target="_blank" >RIV/00216305:26220/04:PU45408 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Thick film resistor characterisation by non-linearity and resistance change after high voltage stress

Popis výsledku v původním jazyce

Experimental investigation on cermet thick film resistors shows, that non-linearity and resistance is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and resistance were measured beffore and after high voltage stress. Three mechanisms were observed. (i) Sample resistance and non-linearity decreases after high voltage stressing. We suppose, that the effect of resistance and non-linearity lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance and non-linearity increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed bec

Název v anglickém jazyce

Thick film resistor characterisation by non-linearity and resistance change after high voltage stress

Popis výsledku anglicky

Experimental investigation on cermet thick film resistors shows, that non-linearity and resistance is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and resistance were measured beffore and after high voltage stress. Three mechanisms were observed. (i) Sample resistance and non-linearity decreases after high voltage stressing. We suppose, that the effect of resistance and non-linearity lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance and non-linearity increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed bec

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/ME%20605" target="_blank" >ME 605: Šum HEMT pro globální komunikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2004

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

New Trends in Physics - Proceedings of the Conference

ISBN

80-7355-024-5

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

88-91

Název nakladatele

Department of Physics FEEC, Brno University of Technology

Místo vydání

Brno

Místo konání akce

Brno

Datum konání akce

11. 11. 2004

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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