Ladění tyristorových A/V charakteristik S-typu pro aplikaci ESD ochran v IO

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU74140" target="_blank" >RIV/00216305:26220/08:PU74140 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Jazyk výsledku
angličtina
Název v původním jazyce
SCR I-V Characteristics tuning for applications of ESD protections
Popis výsledku v původním jazyce
The ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. The ESD protections are located between IC`s pins. The use of such structures provides ICs robustness against anESD event. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with some structures which enable tuning of snapback characteristics. Simulated technology was CMOS very high voltage (VHVIC).
Název v anglickém jazyce
SCR I-V Characteristics tuning for applications of ESD protections
Popis výsledku anglicky
The ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. The ESD protections are located between IC`s pins. The use of such structures provides ICs robustness against anESD event. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with some structures which enable tuning of snapback characteristics. Simulated technology was CMOS very high voltage (VHVIC).

Rok uplatnění
2008
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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