Sekundární fotoproud, proud generovaný sekundárně emitovanými fotony

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU78798" target="_blank" >RIV/00216305:26220/08:PU78798 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

SECONDARY PHOTOCURRENT, CURRENT GENERATED FROM SECONDARY EMITTED PHOTONS

Popis výsledku v původním jazyce

This work presents a detailed analysis of the LBIC images with visible back side contact. The LBIC measurement for a solar cell local characterization has been developed and tested on mono-crystalline silicon solar cells. The solar cells were locally illuminated by a focused light source of different wavelengths. The response (current or potential) of the solar cell was measured at stationary conditions during the scanning process. A large number of independent data with high spatial resolution were obtained. Applying an advanced fitting procedure on these data yields a set of local parameters for each point on the solar cell, giving information on the distribution of the photo current, series, shunt resistance and lateral diffusion of minority carriers. The theoretical approach to this technique will be discussed and the applicability of this characterization tool will be demonstrated and compared. We have studied a group of silicon solar cells with good and wrong standard parameters.

Název v anglickém jazyce

SECONDARY PHOTOCURRENT, CURRENT GENERATED FROM SECONDARY EMITTED PHOTONS

Popis výsledku anglicky

This work presents a detailed analysis of the LBIC images with visible back side contact. The LBIC measurement for a solar cell local characterization has been developed and tested on mono-crystalline silicon solar cells. The solar cells were locally illuminated by a focused light source of different wavelengths. The response (current or potential) of the solar cell was measured at stationary conditions during the scanning process. A large number of independent data with high spatial resolution were obtained. Applying an advanced fitting procedure on these data yields a set of local parameters for each point on the solar cell, giving information on the distribution of the photo current, series, shunt resistance and lateral diffusion of minority carriers. The theoretical approach to this technique will be discussed and the applicability of this characterization tool will be demonstrated and compared. We have studied a group of silicon solar cells with good and wrong standard parameters.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

23rd European Photovoltaic Solar Energy Conference, 1-5 September 2008, Valencia, Spain

ISBN

3-936338-24-8

ISSN

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e-ISSN

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Počet stran výsledku

3

Strana od-do

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Název nakladatele

Neuveden

Místo vydání

Neuveden

Místo konání akce

Valencie

Datum konání akce

1. 9. 2008

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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