Local optical and electric characteristics of solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU84917" target="_blank" >RIV/00216305:26220/10:PU84917 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Local optical and electric characteristics of solar cells

Popis výsledku v původním jazyce

Today photovoltaic cells are divided into two principal types: higher-efficiency but quite expensive crystalline silicon solar cells (either monocrystalline or multicrystalline), and lower-cost thin-film solar cells, usually composed of amorphous silicon, polycrystalline silicon, cadmium telluride, or copper indium gallium diselenide. In both cases their operation is based on a large-area pn junction. Their efficiency is generally limited by defects and impurities, which include grain boundaries, dislocations, and transition metals. A wide variety of defects can be formed in a silicon crystals during and after their growth. Some of defects arise on cell surface during its life-time such as scratches. These surface damages are origin of lower light-trapping efficiency. Many of defects do not cause cell malfunction, but generate local microplasmas, which are conductive and hence reduce overall cell efficiency. A number of defects of various kinds, some of them being of local character on

Název v anglickém jazyce

Local optical and electric characteristics of solar cells

Popis výsledku anglicky

Today photovoltaic cells are divided into two principal types: higher-efficiency but quite expensive crystalline silicon solar cells (either monocrystalline or multicrystalline), and lower-cost thin-film solar cells, usually composed of amorphous silicon, polycrystalline silicon, cadmium telluride, or copper indium gallium diselenide. In both cases their operation is based on a large-area pn junction. Their efficiency is generally limited by defects and impurities, which include grain boundaries, dislocations, and transition metals. A wide variety of defects can be formed in a silicon crystals during and after their growth. Some of defects arise on cell surface during its life-time such as scratches. These surface damages are origin of lower light-trapping efficiency. Many of defects do not cause cell malfunction, but generate local microplasmas, which are conductive and hence reduce overall cell efficiency. A number of defects of various kinds, some of them being of local character on

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F08%2F1474" target="_blank" >GA102/08/1474: Lokální optická a elektrická charakterizace optoelektronických struktur s nanometrickým rozlišením</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Ninth International Conference on Correlation Optics

ISBN

978-0-8194-7671-5

ISSN

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e-ISSN

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Počet stran výsledku

9

Strana od-do

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Název nakladatele

SPIE

Místo vydání

Bellingham, USA

Místo konání akce

Chernivtsy

Datum konání akce

20. 9. 2009

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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