Influence of Rapid Thermal Annealing on Silicon Wafers with Swirls

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU92775" target="_blank" >RIV/00216305:26220/10:PU92775 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Influence of Rapid Thermal Annealing on Silicon Wafers with Swirls

Popis výsledku v původním jazyce

We can use Rapid Thermal Annealing (RTA) for silicon wafers treatment to achieve better bulk properties. Rapid change of temperature has specific influence on different wafers behavior in RTP technology in the contrast to the standard heating technology.Rapid temperature change can be followed besides positive effects by creation of stresses and defects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrierlifetime and with swirls. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing. The influence of key RTP parameterson minority carrier lifetime was investigated. These parameters are maximum temperature, rate of ramp up/down temperature and plateau time. The influence RTP parameters was investigated with the aid of factor analyse. The maximum annealing temperature is the key parameter for high minority carrier lifetime.

Název v anglickém jazyce

Influence of Rapid Thermal Annealing on Silicon Wafers with Swirls

Popis výsledku anglicky

We can use Rapid Thermal Annealing (RTA) for silicon wafers treatment to achieve better bulk properties. Rapid change of temperature has specific influence on different wafers behavior in RTP technology in the contrast to the standard heating technology.Rapid temperature change can be followed besides positive effects by creation of stresses and defects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrierlifetime and with swirls. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing. The influence of key RTP parameterson minority carrier lifetime was investigated. These parameters are maximum temperature, rate of ramp up/down temperature and plateau time. The influence RTP parameters was investigated with the aid of factor analyse. The maximum annealing temperature is the key parameter for high minority carrier lifetime.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings

ISBN

3-936338-26-4

ISSN

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e-ISSN

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Počet stran výsledku

5564

Strana od-do

2525-2527

Název nakladatele

Neuveden

Místo vydání

Neuveden

Místo konání akce

Valencia

Datum konání akce

6. 9. 2010

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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