Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU92666" target="_blank" >RIV/00216305:26220/11:PU92666 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Popis výsledku v původním jazyce

Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Název v anglickém jazyce

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Popis výsledku anglicky

Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F11%2F0995" target="_blank" >GAP102/11/0995: Transport elektronů, šum a diagnostika Shottkyho a autoemisních katod</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Inventi Rapid: Energy & Power

ISSN

2229-7774

e-ISSN

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Svazek periodika

2011

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

IN - Indická republika

Počet stran výsledku

4

Strana od-do

1-4

Kód UT WoS článku

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EID výsledku v databázi Scopus

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