Local measurement of solar cell emission characteristics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU95007" target="_blank" >RIV/00216305:26220/11:PU95007 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Local measurement of solar cell emission characteristics

Popis výsledku v původním jazyce

Light emission inspection technique are generally used for the localization of defects. In this paper, the emission comes from reverse biased mono-crystalline solar cells. Firstly, it is demonstrated that light emission of reverse biased solar cells is observable with our system. Experimental data of light emission from cracks, bulk defects, and borders of the cell are presented. Following these measurements, a few scratches were wittingly made on the top side of the solar cell sample and light emissionwas measured again for the same reverse voltage value. A method for distinguishing micro-crack and scratches from recombination centers is also presented. This method is based on detecting light emission intensity while varying the sample temperature, holding the reverse bias level fixed. The light emission data are then correlated with laser beam induced current maps. It is found that there is a different light emission temperature behavior in the case of bulk recombination defects and

Název v anglickém jazyce

Local measurement of solar cell emission characteristics

Popis výsledku anglicky

Light emission inspection technique are generally used for the localization of defects. In this paper, the emission comes from reverse biased mono-crystalline solar cells. Firstly, it is demonstrated that light emission of reverse biased solar cells is observable with our system. Experimental data of light emission from cracks, bulk defects, and borders of the cell are presented. Following these measurements, a few scratches were wittingly made on the top side of the solar cell sample and light emissionwas measured again for the same reverse voltage value. A method for distinguishing micro-crack and scratches from recombination centers is also presented. This method is based on detecting light emission intensity while varying the sample temperature, holding the reverse bias level fixed. The light emission data are then correlated with laser beam induced current maps. It is found that there is a different light emission temperature behavior in the case of bulk recombination defects and

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Proceedings of SPIE

ISSN

0277-786X

e-ISSN

—

Svazek periodika

8036

Číslo periodika v rámci svazku

8306

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

"1H1"-"1H6"

Kód UT WoS článku

—

EID výsledku v databázi Scopus

—