Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU103765" target="_blank" >RIV/00216305:26220/13:PU103765 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1051/epjconf/20134800002" target="_blank" >http://dx.doi.org/10.1051/epjconf/20134800002</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1051/epjconf/20134800002" target="_blank" >10.1051/epjconf/20134800002</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy
Popis výsledku v původním jazyce
The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For thatpurpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.
Název v anglickém jazyce
Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy
Popis výsledku anglicky
The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For thatpurpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
JA - Elektronika a optoelektronika, elektrotechnika
OECD FORD obor
—
Návaznosti výsledku
Projekt
<a href="/cs/project/GAP102%2F11%2F0995" target="_blank" >GAP102/11/0995: Transport elektronů, šum a diagnostika Shottkyho a autoemisních katod</a><br>
Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2013
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
EPJ Web of Conferences
ISSN
2100-014X
e-ISSN
—
Svazek periodika
48
Číslo periodika v rámci svazku
48
Stát vydavatele periodika
FR - Francouzská republika
Počet stran výsledku
4
Strana od-do
"00002.1"-"0002.4"
Kód UT WoS článku
—
EID výsledku v databázi Scopus
—