A variety of microstructural defects in crystalline silicon solar cells
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F14%3APU109180" target="_blank" >RIV/00216305:26220/14:PU109180 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1016/j.apsusc.2014.05.064" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2014.05.064</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2014.05.064" target="_blank" >10.1016/j.apsusc.2014.05.064</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
A variety of microstructural defects in crystalline silicon solar cells
Popis výsledku v původním jazyce
The performance and lifetime of solar cells critically depends on bulk and surface defects. To improve performance of solar cells, localization and characterization of defects on the microscale is an important issue. This paper describes a variety of microstructural defects in crystalline silicon solar cells which appear during the cell processing steps. The set of defects have been investigated and localized using visible light emission under reversed bias voltage. A light beam induced photocurrent method allows localization of defects having impact on the sample current-voltage plot and reversed bias light emission characteristics. These are shown together with the micrographs of defective surface areas. As a result, particular defects which induce nonlinearity and local breakdown in the current-voltage plot were identified in tested solar cell structures. Furthermore, measurements at various temperatures allows to identify the breakdown mechanism of the investigated defects. An interesting result of the investigation is that the majority of defects are associated with surface inhomogeneities, but not all surface inhomogeneities act as defects.
Název v anglickém jazyce
A variety of microstructural defects in crystalline silicon solar cells
Popis výsledku anglicky
The performance and lifetime of solar cells critically depends on bulk and surface defects. To improve performance of solar cells, localization and characterization of defects on the microscale is an important issue. This paper describes a variety of microstructural defects in crystalline silicon solar cells which appear during the cell processing steps. The set of defects have been investigated and localized using visible light emission under reversed bias voltage. A light beam induced photocurrent method allows localization of defects having impact on the sample current-voltage plot and reversed bias light emission characteristics. These are shown together with the micrographs of defective surface areas. As a result, particular defects which induce nonlinearity and local breakdown in the current-voltage plot were identified in tested solar cell structures. Furthermore, measurements at various temperatures allows to identify the breakdown mechanism of the investigated defects. An interesting result of the investigation is that the majority of defects are associated with surface inhomogeneities, but not all surface inhomogeneities act as defects.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20201 - Electrical and electronic engineering
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2014
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Applied Surface Science
ISSN
0169-4332
e-ISSN
1873-5584
Svazek periodika
312
Číslo periodika v rámci svazku
312
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
7
Strana od-do
50-56
Kód UT WoS článku
000339998700009
EID výsledku v databázi Scopus
2-s2.0-84904766574