Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU112291" target="_blank" >RIV/00216305:26220/15:PU112291 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2069504" target="_blank" >http://dx.doi.org/10.1117/12.2069504</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2069504" target="_blank" >10.1117/12.2069504</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

Popis výsledku v původním jazyce

We report on detection and localization of imperfections in silicon solar cell bulk and surface with sub-micrometer resolution. To obtain this resolution, a family of imaging techniques including SNOM, SEM and AFM is often separately used for this purpose. In this paper we combine several of these proximal methods together, because each of them brings complimentary information about the imperfection. First, we note that SNOM images often contain distortions due to the interaction of the probe tip and sample. Therefore, we look for the possibility to circumvent this weakness and obtain more realistic images. In our experiments, we take advantage of the fact that defects or imperfections in silicon solar cell structures under reverse-bias voltage exhibit microscale low light emitting spots, and we apply an improved SNOM measurement to localize these spots. As a result, this system allows a localization and measurement of low light emission on microscale. Consequently, the size and shape of imperfections can also be determined.

Název v anglickém jazyce

Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

Popis výsledku anglicky

We report on detection and localization of imperfections in silicon solar cell bulk and surface with sub-micrometer resolution. To obtain this resolution, a family of imaging techniques including SNOM, SEM and AFM is often separately used for this purpose. In this paper we combine several of these proximal methods together, because each of them brings complimentary information about the imperfection. First, we note that SNOM images often contain distortions due to the interaction of the probe tip and sample. Therefore, we look for the possibility to circumvent this weakness and obtain more realistic images. In our experiments, we take advantage of the fact that defects or imperfections in silicon solar cell structures under reverse-bias voltage exhibit microscale low light emitting spots, and we apply an improved SNOM measurement to localize these spots. As a result, this system allows a localization and measurement of low light emission on microscale. Consequently, the size and shape of imperfections can also be determined.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Proceedings of SPIE

ISSN

0277-786X

e-ISSN

—

Svazek periodika

9450

Číslo periodika v rámci svazku

9450

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

„94501O-1“-„94501O-7“

Kód UT WoS článku

000349404500058

EID výsledku v databázi Scopus

2-s2.0-84923011988