An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU132437" target="_blank" >RIV/00216305:26220/20:PU132437 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/8949821" target="_blank" >https://ieeexplore.ieee.org/document/8949821</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TEMC.2019.2958926" target="_blank" >10.1109/TEMC.2019.2958926</a>

Jazyk výsledku

angličtina

Název v původním jazyce

An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference

Popis výsledku v původním jazyce

This article proposes an electromagnetic compatibility improved bandgap voltage reference with a low current consumption of only 3.5 uA in an automotive environment with a wide temperature range from -40 degrees C to 160 degrees C and a high electromagnetic interference (EMI) robustness. The proposed reference is based on the well-known Brokaw bandgap with only five bipolar transistors in the bandgap core including collector current leakage compensation. We analyzed parasitic effects in the bandgap core such as the influence of parasitic capacitances between the substrate and the collectors of these bipolar transistors as well as the impact of the operational amplifier. We made recommendations on how to improve the bandgap EMI robustness. Simulation results were compared with measurements on a test chip. The measurement results showed excellent EMI robustness.

Název v anglickém jazyce

An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference

Popis výsledku anglicky

This article proposes an electromagnetic compatibility improved bandgap voltage reference with a low current consumption of only 3.5 uA in an automotive environment with a wide temperature range from -40 degrees C to 160 degrees C and a high electromagnetic interference (EMI) robustness. The proposed reference is based on the well-known Brokaw bandgap with only five bipolar transistors in the bandgap core including collector current leakage compensation. We analyzed parasitic effects in the bandgap core such as the influence of parasitic capacitances between the substrate and the collectors of these bipolar transistors as well as the impact of the operational amplifier. We made recommendations on how to improve the bandgap EMI robustness. Simulation results were compared with measurements on a test chip. The measurement results showed excellent EMI robustness.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transaction on Electromagnetic Compatibility

ISSN

0018-9375

e-ISSN

1558-187X

Svazek periodika

62

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

2277-2284

Kód UT WoS článku

000577982400069

EID výsledku v databázi Scopus

2-s2.0-85094184858