An EMI Susceptibility Improved, Wide Temperature Range Bandgap Voltage Reference

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F24%3APU144441" target="_blank" >RIV/00216305:26220/24:PU144441 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/10502225" target="_blank" >https://ieeexplore.ieee.org/document/10502225</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TEMC.2024.3381816" target="_blank" >10.1109/TEMC.2024.3381816</a>

Jazyk výsledku

angličtina

Název v původním jazyce

An EMI Susceptibility Improved, Wide Temperature Range Bandgap Voltage Reference

Popis výsledku v původním jazyce

This article presents a new electromagnetic compatibility improved bandgap voltage reference with a low-current consumption of only 3.2 μA. The reference is designed for automotive applications with an extended temperature range from −50 to 200 °C and a low electromagnetic interference (EMI) susceptibility. The designed reference comes from the well-known Brokaw bandgap topology utilizing only five bipolar junction transistors in a reference core with a collector current leakage compensation. We propose several novel EMI susceptibility improvements of the reference core with a new asymmetrical operational amplifier. Every improvement is discussed in detail and general recommendations, on how to decrease the bandgap EMI susceptibility, are presented. Simulation results are compared with measurements on a system on chip. Measurement results show dc voltage variation below 0.5% for 5 mW (7 dBm) supply EMI over the frequency range from 100 kHz to 1 GHz.

Název v anglickém jazyce

An EMI Susceptibility Improved, Wide Temperature Range Bandgap Voltage Reference

Popis výsledku anglicky

This article presents a new electromagnetic compatibility improved bandgap voltage reference with a low-current consumption of only 3.2 μA. The reference is designed for automotive applications with an extended temperature range from −50 to 200 °C and a low electromagnetic interference (EMI) susceptibility. The designed reference comes from the well-known Brokaw bandgap topology utilizing only five bipolar junction transistors in a reference core with a collector current leakage compensation. We propose several novel EMI susceptibility improvements of the reference core with a new asymmetrical operational amplifier. Every improvement is discussed in detail and general recommendations, on how to decrease the bandgap EMI susceptibility, are presented. Simulation results are compared with measurements on a system on chip. Measurement results show dc voltage variation below 0.5% for 5 mW (7 dBm) supply EMI over the frequency range from 100 kHz to 1 GHz.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY

ISSN

0018-9375

e-ISSN

1558-187X

Svazek periodika

1

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

001205841300001

EID výsledku v databázi Scopus

2-s2.0-85190726904