Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU137098" target="_blank" >RIV/00216305:26220/20:PU137098 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

Popis výsledku v původním jazyce

This article deals with the extrinsic and intrinsic parameters of the Galium-Nitride RF transistor. These parameters are essential in any design of large-signal analysis of RF amplifiers. Package parasitics are the biggest problem of integrated circuits (ICs), especially at high frequencies. Each IC package gives unwanted parasitics to the primary function of the IC. The analysis of these package parasitics can be performed by the transistor manufacturer, which provides a non-linear model of the transistor, where parasitics elements are separated from the transistor. With these sep-arated package parasitics, the highest efficiency, power output, and accurate harmonic termination can be achieved. The main purpose of this article is to describe these problems.

Název v anglickém jazyce

Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

Popis výsledku anglicky

This article deals with the extrinsic and intrinsic parameters of the Galium-Nitride RF transistor. These parameters are essential in any design of large-signal analysis of RF amplifiers. Package parasitics are the biggest problem of integrated circuits (ICs), especially at high frequencies. Each IC package gives unwanted parasitics to the primary function of the IC. The analysis of these package parasitics can be performed by the transistor manufacturer, which provides a non-linear model of the transistor, where parasitics elements are separated from the transistor. With these sep-arated package parasitics, the highest efficiency, power output, and accurate harmonic termination can be achieved. The main purpose of this article is to describe these problems.

Druh

O - Ostatní výsledky

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů