Effect Of Al2O3 Barrier On The Field Emission Properties Of Tungsten Single-Tip Field Emitters

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F22%3APU146716" target="_blank" >RIV/00216305:26220/22:PU146716 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2022_sbornik_2_v3.pdf" target="_blank" >https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2022_sbornik_2_v3.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Effect Of Al2O3 Barrier On The Field Emission Properties Of Tungsten Single-Tip Field Emitters

Popis výsledku v původním jazyce

This research aims to obtain a more in-depth understanding of the field emission properties of tungsten single-tip field emitters (STFEs) coated with a several tens of nanometer thin barrier of Al2O3. The introduction of an additional barrier into the metal-vacuum interface system of the emitter can be beneficial to improve its performance. The tungsten emitters were prepared using a two-step electrochemical drop-off etching technique. Thin oxide barrier coatings were prepared by using low-temperature atomic layer deposition (ALD), a chemical vapor deposition technique. Field emission was studied in an internally developed field emission microscope (FEM) working in UHV vacuum (< 1·10−7 Pa), and the experimental field emission data were analyzed by the so-called Murphy-Good plotsThe value of the local work function of the grown oxide layer were investigated using Ultra-violet photoelectron spectroscopy (UPS).

Název v anglickém jazyce

Effect Of Al2O3 Barrier On The Field Emission Properties Of Tungsten Single-Tip Field Emitters

Popis výsledku anglicky

This research aims to obtain a more in-depth understanding of the field emission properties of tungsten single-tip field emitters (STFEs) coated with a several tens of nanometer thin barrier of Al2O3. The introduction of an additional barrier into the metal-vacuum interface system of the emitter can be beneficial to improve its performance. The tungsten emitters were prepared using a two-step electrochemical drop-off etching technique. Thin oxide barrier coatings were prepared by using low-temperature atomic layer deposition (ALD), a chemical vapor deposition technique. Field emission was studied in an internally developed field emission microscope (FEM) working in UHV vacuum (< 1·10−7 Pa), and the experimental field emission data were analyzed by the so-called Murphy-Good plotsThe value of the local work function of the grown oxide layer were investigated using Ultra-violet photoelectron spectroscopy (UPS).

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů