Effect Of Al2O3 Barrier On The Field Emission Properties Of Tungsten Single-Tip Field Emitters

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F22%3A00568824" target="_blank" >RIV/68081731:_____/22:00568824 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2022_sbornik_2_v3.pdf" target="_blank" >https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2022_sbornik_2_v3.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Effect Of Al2O3 Barrier On The Field Emission Properties Of Tungsten Single-Tip Field Emitters

Popis výsledku v původním jazyce

This research aims to obtain a more in-depth understanding of the field emission properties of tungsten single-tip field emitters (STFEs) coated with a several tens of nanometer thin barrier of Al2O3. The introduction of an additional barrier into the metal-vacuum interface system of the emitter can be beneficial to improve its performance. The tungsten emitters were prepared using a two-step electrochemical drop-off etching technique. Thin oxide barrier coatings were prepared by using low-temperature atomic layer deposition (ALD), a chemical vapor deposition technique. Field emission was studied in an internally developed field emission microscope (FEM) working in UHV vacuum (< 1·10−7 Pa), and the experimental field emission data were analyzed by the so-called Murphy-Good plotsThe value of the local work function of the grown oxide layer were investigated using Ultra-violet photoelectron spectroscopy (UPS).

Název v anglickém jazyce

Effect Of Al2O3 Barrier On The Field Emission Properties Of Tungsten Single-Tip Field Emitters

Popis výsledku anglicky

This research aims to obtain a more in-depth understanding of the field emission properties of tungsten single-tip field emitters (STFEs) coated with a several tens of nanometer thin barrier of Al2O3. The introduction of an additional barrier into the metal-vacuum interface system of the emitter can be beneficial to improve its performance. The tungsten emitters were prepared using a two-step electrochemical drop-off etching technique. Thin oxide barrier coatings were prepared by using low-temperature atomic layer deposition (ALD), a chemical vapor deposition technique. Field emission was studied in an internally developed field emission microscope (FEM) working in UHV vacuum (< 1·10−7 Pa), and the experimental field emission data were analyzed by the so-called Murphy-Good plotsThe value of the local work function of the grown oxide layer were investigated using Ultra-violet photoelectron spectroscopy (UPS).

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10303 - Particles and field physics

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings II of the 28th Conference STUDENT EEICT 2022. Selected Papers

ISBN

978-80-214-6030-0

ISSN

2788-1334

e-ISSN

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Počet stran výsledku

4

Strana od-do

255-258

Název nakladatele

Brno University of Technology, Faculty of Electrical Engineering and Communication

Místo vydání

Brno

Místo konání akce

Brno

Datum konání akce

26. 4. 2022

Typ akce podle státní příslušnosti

CST - Celostátní akce

Kód UT WoS článku

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