Charakterizace a-SiOC:H tenkých vrstev připravených metodou PE CVD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F04%3APU49371" target="_blank" >RIV/00216305:26310/04:PU49371 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/04:00104229 RIV/61389005:_____/04:00105671

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Basic characteristics of the a-SiOC:H thin films prepared by PE CVD

Popis výsledku v původním jazyce

Hydrogenated amorphous silicon oxycarbide (a-SiOC:H) thin films were prepared by plasma-enhanced chemical vapour deposition (PE CVD) using an RF helical coupling pulsed-plasma system. Films of the thickness ranging from 20 nm to 1.4 ?m were deposited onsilicon wafers from vinyltriethoxysilane (VTES) precursor. The thickness of plasma-polymerized films was measured by a Profilometer Talystep using a defined scratch in the layer as deep as the substrate. The deposition rate was observed with respect to tthe effective power used and the determined dependence could be explained on a basis of the competitive ablation and polymerization mechanisms. Very high deposition rates as far as about 120 nm/min could be reached if proper deposition conditions were tuned. The elemental composition and atomic surface density of thin films were studied by conventional and resonant Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) methods. The Si, C and O bulk conte

Název v anglickém jazyce

Basic characteristics of the a-SiOC:H thin films prepared by PE CVD

Popis výsledku anglicky

Hydrogenated amorphous silicon oxycarbide (a-SiOC:H) thin films were prepared by plasma-enhanced chemical vapour deposition (PE CVD) using an RF helical coupling pulsed-plasma system. Films of the thickness ranging from 20 nm to 1.4 ?m were deposited onsilicon wafers from vinyltriethoxysilane (VTES) precursor. The thickness of plasma-polymerized films was measured by a Profilometer Talystep using a defined scratch in the layer as deep as the substrate. The deposition rate was observed with respect to tthe effective power used and the determined dependence could be explained on a basis of the competitive ablation and polymerization mechanisms. Very high deposition rates as far as about 120 nm/min could be reached if proper deposition conditions were tuned. The elemental composition and atomic surface density of thin films were studied by conventional and resonant Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) methods. The Si, C and O bulk conte

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2004

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Czechoslovak Journal of Physics

ISSN

0011-4626

e-ISSN

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Svazek periodika

C

Číslo periodika v rámci svazku

54

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

5

Strana od-do

937-941

Kód UT WoS článku

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EID výsledku v databázi Scopus

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