How Xe and Ga FIB differ in inducing lateral damage on TEM samples

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F15%3APU128836" target="_blank" >RIV/00216305:26620/15:PU128836 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/01733214:_____/15:00000007

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

How Xe and Ga FIB differ in inducing lateral damage on TEM samples

Popis výsledku v původním jazyce

Reducing FIB induced damage on TEM samples is very important in order to preserve the sample structure, especially on modern semiconductor devices. We have compared the damage caused by Ga ion beam to our measurements of the damage caused by Xe ion beam and came to the conclusion that Xe ion beam induced damage is significantly lower at 30 keV beam energy. This has been proven by several independent analytical methods. Our results show that TEM sample preparation by Xe ion beam causes less amorphous damage and increase the quality of the lamella and in many cases it will allow to prepare the lamella by finishing it even at 30 keV, without the final cleaning step at the low beam energy. Final polishing step by Xe beam at beam energy 3 keV further reduces the amorphous layer, but the difference against Ga beam is not so significant like at 30 keV.

Název v anglickém jazyce

How Xe and Ga FIB differ in inducing lateral damage on TEM samples

Popis výsledku anglicky

Reducing FIB induced damage on TEM samples is very important in order to preserve the sample structure, especially on modern semiconductor devices. We have compared the damage caused by Ga ion beam to our measurements of the damage caused by Xe ion beam and came to the conclusion that Xe ion beam induced damage is significantly lower at 30 keV beam energy. This has been proven by several independent analytical methods. Our results show that TEM sample preparation by Xe ion beam causes less amorphous damage and increase the quality of the lamella and in many cases it will allow to prepare the lamella by finishing it even at 30 keV, without the final cleaning step at the low beam energy. Final polishing step by Xe beam at beam energy 3 keV further reduces the amorphous layer, but the difference against Ga beam is not so significant like at 30 keV.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)

Projekt

<a href="/cs/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: CEITEC - central european institute of technology</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

ISTFA 2015: CONFERENCE PROCEEDINGS FROM THE 41ST INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS

ISBN

978-1-62708-102-3

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

65-70

Název nakladatele

Neuveden

Místo vydání

Neuveden

Místo konání akce

Portland, OR

Datum konání akce

1. 11. 2015

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000377554900013