Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F26%3A0200721" target="_blank" >RIV/00216305:26620/26:0200721 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.nature.com/articles/s43246-025-01020-w" target="_blank" >https://www.nature.com/articles/s43246-025-01020-w</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s43246-025-01020-w" target="_blank" >10.1038/s43246-025-01020-w</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability

Popis výsledku v původním jazyce

The integration of high-quality, ultrathin van der Waals (vdW) dielectrics with 2D semiconductors remains a critical bottleneck in the development of reliable, ultra-scaled field-effect transistors (FETs). Here, we report a comprehensive study of MoS2-based FETs employing layered rhombohedral MnAl2S4 as the gate insulator, a previously unexplored vdW dielectric that can be isolated down to the monolayer limit. Devices fabricated in both top-gated (TG) and bottom-gated (BT) configurations exhibit excellent electrical performance, featuring low gate leakage, minimal hysteresis ( < 2 mV) under high electric fields up to 11 MV cm(-1) across a wide range of gate voltage sweep rates (0.001-10 Vs(-1)). We observed a consistent counterclockwise hysteresis and an anomalous bias temperature instability (BTI), possibly caused by the diffusion of Mn interstitials and S vacancies formed inside the MnAl2S4 film during growth. Notably, we show that threshold voltage degradation at high temperatures was observed to be negligible, and hysteresis dynamics and very small BTI are reproducible over a long time, demonstrating the high reliability of our devices. In addition, the vdW interface between MnAl2S4 and MoS2 in our device is of good quality and is expected to provide a small density of insulator defects, a promising gate dielectric for reliable 2D devices.

Název v anglickém jazyce

Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability

Popis výsledku anglicky

The integration of high-quality, ultrathin van der Waals (vdW) dielectrics with 2D semiconductors remains a critical bottleneck in the development of reliable, ultra-scaled field-effect transistors (FETs). Here, we report a comprehensive study of MoS2-based FETs employing layered rhombohedral MnAl2S4 as the gate insulator, a previously unexplored vdW dielectric that can be isolated down to the monolayer limit. Devices fabricated in both top-gated (TG) and bottom-gated (BT) configurations exhibit excellent electrical performance, featuring low gate leakage, minimal hysteresis ( < 2 mV) under high electric fields up to 11 MV cm(-1) across a wide range of gate voltage sweep rates (0.001-10 Vs(-1)). We observed a consistent counterclockwise hysteresis and an anomalous bias temperature instability (BTI), possibly caused by the diffusion of Mn interstitials and S vacancies formed inside the MnAl2S4 film during growth. Notably, we show that threshold voltage degradation at high temperatures was observed to be negligible, and hysteresis dynamics and very small BTI are reproducible over a long time, demonstrating the high reliability of our devices. In addition, the vdW interface between MnAl2S4 and MoS2 in our device is of good quality and is expected to provide a small density of insulator defects, a promising gate dielectric for reliable 2D devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2026

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Communications Materials

ISSN

—

e-ISSN

2662-4443

Svazek periodika

7

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

—

Kód UT WoS článku

001658758800001

EID výsledku v databázi Scopus

2-s2.0-105026986337