Conductivity of boron-doped diamond at high electrical field

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F19%3AN0000049" target="_blank" >RIV/26722445:_____/19:N0000049 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/19:00517725 RIV/68407700:21230/19:00332502 RIV/68407700:21460/19:00332502

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/abs/pii/S0925963518307726" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0925963518307726</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2019.107476" target="_blank" >10.1016/j.diamond.2019.107476</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Conductivity of boron-doped diamond at high electrical field

Popis výsledku v původním jazyce

Electrical properties of epitaxial boron-doped diamond layers are studied at high electric fields in a wide range of boron concentration. Current-voltage characteristics co-planar concentric disk ring electrodes devices were measured using transmission line pulsed (TLP) characterization technique. Finite element method shows the electric field between test structures with co-planar plane parallel electrodes, used in previous studies, and concentric disk ring electrodes are comparable for inner ring electrode with a large diameter. The threshold electric field for the observed sudden increase of current, attributed to impurity impact ionization and/or self heating, decreases from 130 kV.cm(-1) to 70 kV.cm(-1) with the increasing boron concentration in the epitaxial diamond layer. The measured quasi-static current grows exponentially with the electric field for energy dissipated in the devices limited below 2 mu J.

Název v anglickém jazyce

Conductivity of boron-doped diamond at high electrical field

Popis výsledku anglicky

Electrical properties of epitaxial boron-doped diamond layers are studied at high electric fields in a wide range of boron concentration. Current-voltage characteristics co-planar concentric disk ring electrodes devices were measured using transmission line pulsed (TLP) characterization technique. Finite element method shows the electric field between test structures with co-planar plane parallel electrodes, used in previous studies, and concentric disk ring electrodes are comparable for inner ring electrode with a large diameter. The threshold electric field for the observed sudden increase of current, attributed to impurity impact ionization and/or self heating, decreases from 130 kV.cm(-1) to 70 kV.cm(-1) with the increasing boron concentration in the epitaxial diamond layer. The measured quasi-static current grows exponentially with the electric field for energy dissipated in the devices limited below 2 mu J.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and related materials

ISSN

0925-9635

e-ISSN

1879-0062

Svazek periodika

98

Číslo periodika v rámci svazku

October

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

5

Strana od-do

1-5

Kód UT WoS článku

000488305000009

EID výsledku v databázi Scopus

2-s2.0-85069690364