Novel applications of and solutions in the SOI technology

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F15%3A%230000094" target="_blank" >RIV/26821532:_____/15:#0000094 - isvavai.cz</a>

Výsledek na webu

<a href="http://dms.fzu.cz/" target="_blank" >http://dms.fzu.cz/</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Novel applications of and solutions in the SOI technology

Popis výsledku v původním jazyce

The BGSOI technology (Direct Bond and Grind-back SOI) - the basic method of making SOI wafers ? will do the trick for reasonable price. After wafer bonding and bond strengthening annealing, the material of the device wafer is removed by means of mechanical grinding and the surface of the final device layer is finished by polishing. The typically achievable uniformity of the device layer thickness is +/- 0.5 ?m. The material of the supporting wafer is removed by Taiko grinding and silicon etching and theburied oxide is removed by HF etching. The resulting die thickness keeps the exceptional thickness uniformity of BGSOI, which is an order of magnitude better compared to conventional variability of Taiko grinding (> +/- 5.0 ?m) used with conventional process of device manufacturing. Novel solutions of aspects specific for SOI are discussed as well. These include gettering and stress engineering.

Název v anglickém jazyce

Novel applications of and solutions in the SOI technology

Popis výsledku anglicky

The BGSOI technology (Direct Bond and Grind-back SOI) - the basic method of making SOI wafers ? will do the trick for reasonable price. After wafer bonding and bond strengthening annealing, the material of the device wafer is removed by means of mechanical grinding and the surface of the final device layer is finished by polishing. The typically achievable uniformity of the device layer thickness is +/- 0.5 ?m. The material of the supporting wafer is removed by Taiko grinding and silicon etching and theburied oxide is removed by HF etching. The resulting die thickness keeps the exceptional thickness uniformity of BGSOI, which is an order of magnitude better compared to conventional variability of Taiko grinding (> +/- 5.0 ?m) used with conventional process of device manufacturing. Novel solutions of aspects specific for SOI are discussed as well. These include gettering and stress engineering.

Druh

D - Stať ve sborníku

CEP obor

JJ - Ostatní materiály

OECD FORD obor

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Projekt

<a href="/cs/project/TH01010419" target="_blank" >TH01010419: Výzkum a vývoj nových technologií výroby bipolárního tranzistoru s izolovaným hradlem (TIGBT)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

DEVELOPMENT OF MATERIALS SCIENCE IN RESEARCH AND EDUCATION - BOOK OF ABSTRACTS OF THE 25 th JOINT SEMINAR

ISBN

978-80-89597-28-4

ISSN

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e-ISSN

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Počet stran výsledku

66

Strana od-do

44

Název nakladatele

Slovak Expert Group of Solid State Chemistry and Physics

Místo vydání

Kezmarske Zlaby (SK)

Místo konání akce

Kezmarske Zlaby (SK)

Datum konání akce

31. 8. 2015

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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