Evaluation of TIGBT field stop layer generated by helium implantation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F16%3AN0000007" target="_blank" >RIV/26821532:_____/16:N0000007 - isvavai.cz</a>

Výsledek na webu

<a href="http://ieeexplore.ieee.org/document/7805938/" target="_blank" >http://ieeexplore.ieee.org/document/7805938/</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ASDAM.2016.7805938" target="_blank" >10.1109/ASDAM.2016.7805938</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Evaluation of TIGBT field stop layer generated by helium implantation

Popis výsledku v původním jazyce

R. Pechal, L. Dorňák, J. Vavro, A. Kozelský and A. Klimsza, Evaluation of TIGBT field stop layer generated by helium implantation, 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), Smolenice, 2016, pp. 235-238. doi: 10.1109/ASDAM.2016.7805938: A helium implantation is a common technique used for electron and hole lifetime control in semiconductor devices. Siemieniec [1] shows that suitable annealing conditions after the helium implantation lead to an increased conductivity of N-type silicon substrate in the affected area. Based on these observations a possibility of using helium implantation for generation of the TIGBT field stop layer was evaluated. Required concentration profiles were prepared for test wafers, however, a decreased conductivity in the helium implantation area was observed when using production wafers with standard process flow. The root cause of this discrepancy is diffusion of nitrogen and hydrogen atoms into the silicon during previous diffusion operations and an interaction of these atoms with the implanted helium.

Název v anglickém jazyce

Evaluation of TIGBT field stop layer generated by helium implantation

Popis výsledku anglicky

R. Pechal, L. Dorňák, J. Vavro, A. Kozelský and A. Klimsza, Evaluation of TIGBT field stop layer generated by helium implantation, 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), Smolenice, 2016, pp. 235-238. doi: 10.1109/ASDAM.2016.7805938: A helium implantation is a common technique used for electron and hole lifetime control in semiconductor devices. Siemieniec [1] shows that suitable annealing conditions after the helium implantation lead to an increased conductivity of N-type silicon substrate in the affected area. Based on these observations a possibility of using helium implantation for generation of the TIGBT field stop layer was evaluated. Required concentration profiles were prepared for test wafers, however, a decreased conductivity in the helium implantation area was observed when using production wafers with standard process flow. The root cause of this discrepancy is diffusion of nitrogen and hydrogen atoms into the silicon during previous diffusion operations and an interaction of these atoms with the implanted helium.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/TH01010419" target="_blank" >TH01010419: Výzkum a vývoj nových technologií výroby bipolárního tranzistoru s izolovaným hradlem (TIGBT)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)

ISBN

978-1-5090-3083-5

ISSN

—

e-ISSN

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Počet stran výsledku

4

Strana od-do

235 - 238

Název nakladatele

IEEE

Místo vydání

Smolenice, Slovakia

Místo konání akce

Smolenice, Slovakia

Datum konání akce

13. 11. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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