High deposition rate films prepared by reactive HiPIMS
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F45309787%3A_____%2F21%3AN0000001" target="_blank" >RIV/45309787:_____/21:N0000001 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/49777513:23520/21:43962009 RIV/68378271:_____/21:00567523
Výsledek na webu
<a href="https://www.sciencedirect.com/science/article/abs/pii/S0042207X21002827?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0042207X21002827?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.vacuum.2021.110329" target="_blank" >10.1016/j.vacuum.2021.110329</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
High deposition rate films prepared by reactive HiPIMS
Popis výsledku v původním jazyce
High power impulse magnetron sputtering (HiPIMS) is characterized by a very high current density at the target during each pulse. A large fraction of sputtered target material is ionized, which allows the preparation of hard and defect-free coatings. Compared to the conventional sputtering methods, HiPIMS technology possesses a certain drawback, i.e. lower deposition rate. A promising variation, i.e. reactive HiPIMS, was described by a mathematical model (S. Kadlec, J. Čapek, JAP 121 (2017) 171910). One of the fundamental results shows that reactive HiPIMS can deliver higher deposition rates compared to the mid-frequency pulsed dc magnetron sputtering (Mf-PCDMS) due to a lower degree of target poisoning. To confirm these theoretical results, series of experiments were performed in laboratory deposition system with different target materials (Al, Cr, Ti, Zr, Hf, Ta, Nb). Two targets of the same material were employed both in dual Mf-PDCMS (pulse-on/pulse-off time ratio 45:5 μs) and in dual HiPIMS (pulse-on/pulse-off time ratio 25:725 μs) conditions at a fixed power. We confirmed that higher values of the deposition rate for Ta2O5 and Nb2O5 films can be achieved by HiPIMS when operated in the poisoned regime. Finally, we supported our experimental results by Monte-Carlo simulations performed in SRIM and SDTrimSP simulation software.
Název v anglickém jazyce
High deposition rate films prepared by reactive HiPIMS
Popis výsledku anglicky
High power impulse magnetron sputtering (HiPIMS) is characterized by a very high current density at the target during each pulse. A large fraction of sputtered target material is ionized, which allows the preparation of hard and defect-free coatings. Compared to the conventional sputtering methods, HiPIMS technology possesses a certain drawback, i.e. lower deposition rate. A promising variation, i.e. reactive HiPIMS, was described by a mathematical model (S. Kadlec, J. Čapek, JAP 121 (2017) 171910). One of the fundamental results shows that reactive HiPIMS can deliver higher deposition rates compared to the mid-frequency pulsed dc magnetron sputtering (Mf-PCDMS) due to a lower degree of target poisoning. To confirm these theoretical results, series of experiments were performed in laboratory deposition system with different target materials (Al, Cr, Ti, Zr, Hf, Ta, Nb). Two targets of the same material were employed both in dual Mf-PDCMS (pulse-on/pulse-off time ratio 45:5 μs) and in dual HiPIMS (pulse-on/pulse-off time ratio 25:725 μs) conditions at a fixed power. We confirmed that higher values of the deposition rate for Ta2O5 and Nb2O5 films can be achieved by HiPIMS when operated in the poisoned regime. Finally, we supported our experimental results by Monte-Carlo simulations performed in SRIM and SDTrimSP simulation software.
Klasifikace
Druh
J<sub>SC</sub> - Článek v periodiku v databázi SCOPUS
CEP obor
—
OECD FORD obor
20506 - Coating and films
Návaznosti výsledku
Projekt
<a href="/cs/project/FV30177" target="_blank" >FV30177: Výzkum a vývoj nových pulzních plazmových technologií pro depozici pokročilých tenkovrstvých materiálů</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2021
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Vacuum
ISSN
0042-207X
e-ISSN
1879-2715
Svazek periodika
191
Číslo periodika v rámci svazku
September 2021
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
10
Strana od-do
110329
Kód UT WoS článku
000679319300003
EID výsledku v databázi Scopus
2-s2.0-85107435174