Surface semiconductor phenomena in ferroelectrics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F12%3A%230002170" target="_blank" >RIV/46747885:24220/12:#0002170 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Surface semiconductor phenomena in ferroelectrics

Popis výsledku v původním jazyce

Free ferroelectric surface has been for a long time considered as a source of strong depolarizing field, which is generated by bound charge, when spontaneous polarization has nonzero normal component at the surface of the ferroelectric. In parallel, it was frequently considered that the bound charges are compensated mainly by ions from surrounding environment or by accumulation of charged defects from inside the ferroelectric. The recent observations of domain wall conductivity [Seidel J, et al, NatureMaterials 8, 229 (2009)] and conductivity of free surfaces [Watanabe et al., Phys. Rev. Lett. 86, 332 (2001)] revealed the essential role of semiconductor properties of ferroelectrics in the process of the bound charge compensation by intrinsic free-charge carriers. In this work, the intrinsic screening mechanism of the bound charge on the free ferroelectric surface by electrons and holes is studied by means of phase field simulation based on Landau-Ginzburg-Devoshire theory. The effect

Název v anglickém jazyce

Surface semiconductor phenomena in ferroelectrics

Popis výsledku anglicky

Free ferroelectric surface has been for a long time considered as a source of strong depolarizing field, which is generated by bound charge, when spontaneous polarization has nonzero normal component at the surface of the ferroelectric. In parallel, it was frequently considered that the bound charges are compensated mainly by ions from surrounding environment or by accumulation of charged defects from inside the ferroelectric. The recent observations of domain wall conductivity [Seidel J, et al, NatureMaterials 8, 229 (2009)] and conductivity of free surfaces [Watanabe et al., Phys. Rev. Lett. 86, 332 (2001)] revealed the essential role of semiconductor properties of ferroelectrics in the process of the bound charge compensation by intrinsic free-charge carriers. In this work, the intrinsic screening mechanism of the bound charge on the free ferroelectric surface by electrons and holes is studied by means of phase field simulation based on Landau-Ginzburg-Devoshire theory. The effect

Druh

A - Audiovizuální tvorba

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP204%2F10%2F0616" target="_blank" >GAP204/10/0616: Moderní pizeoelektrické perovskity: kmity krystalové mřížky a doménové stěny</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

ISBN

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Místo vydání

Aveiro, Portugal

Název nakladatele resp. objednatele

University of Aveiro, Aveiro

Verze

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Identifikační číslo nosiče

CD-ISAF-ECAPD-PFM-2012