Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23210%2F11%3A43895751" target="_blank" >RIV/49777513:23210/11:43895751 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23640/11:43895751

Výsledek na webu

<a href="http://dx.doi.org/10.2478/s11534-011-0041-4" target="_blank" >http://dx.doi.org/10.2478/s11534-011-0041-4</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2478/s11534-011-0041-4" target="_blank" >10.2478/s11534-011-0041-4</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Popis výsledku v původním jazyce

The effect of deposition temperature on the structural and optical properties of amorphous hydrogenated silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen was under study. The series of thin films deposited at the deposition temperatures of 50?200°C were inspected by XRD, Raman spectroscopy and UV Vis spectrophotometry. All samples were found to be amorphous with no presence of the crystalline phase. Ordered silicon hydride regions were proved by XRD. Raman measurement analysis substantiated the results received from XRD showing that with increasing deposition temperature silicon-silicon bond-angle fluctuation decreases. The optical characterization based on transmittance spectra in the visible region presented that the refractive index exhibits upward trend with increasing deposition temperature, which can be caused by the densification of the amorphous network.

Název v anglickém jazyce

Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Popis výsledku anglicky

The effect of deposition temperature on the structural and optical properties of amorphous hydrogenated silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen was under study. The series of thin films deposited at the deposition temperatures of 50?200°C were inspected by XRD, Raman spectroscopy and UV Vis spectrophotometry. All samples were found to be amorphous with no presence of the crystalline phase. Ordered silicon hydride regions were proved by XRD. Raman measurement analysis substantiated the results received from XRD showing that with increasing deposition temperature silicon-silicon bond-angle fluctuation decreases. The optical characterization based on transmittance spectra in the visible region presented that the refractive index exhibits upward trend with increasing deposition temperature, which can be caused by the densification of the amorphous network.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/1M06031" target="_blank" >1M06031: Materiály a komponenty pro ochranu životního prostředí</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

CENTRAL EUROPEAN JOURNAL OF PHYSICS

ISSN

1895-1082

e-ISSN

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Svazek periodika

9

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

7

Strana od-do

1301-1308

Kód UT WoS článku

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EID výsledku v databázi Scopus

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