Influence of substrate bias voltage on the mechanical properties of Si-B-C-N films prepared by reactive magnetron sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F03%3A00000132" target="_blank" >RIV/49777513:23520/03:00000132 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Influence of substrate bias voltage on the mechanical properties of Si-B-C-N films prepared by reactive magnetron sputtering

Popis výsledku v původním jazyce

The new quaternary Si-B-C-N materials attract great interest due to their potential applications in coating technologies and microelectronics. These material s can posses a useful set of properties, such as very high hardness, extremely high temperatureresistance, chemical inertness, a wide optical transparency window and wide band gap characteristics. Various deposition techniques, mostly based on a chemical vapour deposition at elevated temperatures or on a polymer precursor pyrolysis, were used to prepare amorphous or crystalline Si-B-C-N ceramics. In our experiments we have used the reactive magnetron sputtering, one of the most versatile techniques compatible with semiconductor technologies. Its further important advantages are an easy up-scal ing and lower deposition temperatures, which are often desirable for practical applications.

Název v anglickém jazyce

Influence of substrate bias voltage on the mechanical properties of Si-B-C-N films prepared by reactive magnetron sputtering

Popis výsledku anglicky

The new quaternary Si-B-C-N materials attract great interest due to their potential applications in coating technologies and microelectronics. These material s can posses a useful set of properties, such as very high hardness, extremely high temperatureresistance, chemical inertness, a wide optical transparency window and wide band gap characteristics. Various deposition techniques, mostly based on a chemical vapour deposition at elevated temperatures or on a polymer precursor pyrolysis, were used to prepare amorphous or crystalline Si-B-C-N ceramics. In our experiments we have used the reactive magnetron sputtering, one of the most versatile techniques compatible with semiconductor technologies. Its further important advantages are an easy up-scal ing and lower deposition temperatures, which are often desirable for practical applications.

Druh

D - Stať ve sborníku

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

JUNIORMAT '03

ISBN

80-214-2462-1

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

20-23

Název nakladatele

University of Technology

Místo vydání

Brno

Místo konání akce

Brno

Datum konání akce

23. 9. 2003

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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