Magnetronem nastříkané vrstvy Si-B-C-N s vysokou oxidační odolností a tepelnou stabilitou na vzduchu při teplotách nad 1500 stupňů C

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F08%3A00313775" target="_blank" >RIV/61389005:_____/08:00313775 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23520/08:00500614

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 degrees C

Popis výsledku v původním jazyce

Novel quaternary Si-B-C-N materials are becoming increasingly attractive because of their possible high-temperature and harsh-environment applications. In the present work, amorphous Si-B-C-N films were deposited on Si and SiC substrates by reactive dc magnetron cosputtering using a single C-Si -B or B4C-Si target in nitrogen-argon gas mixtures. A fixed 75% Si fraction in the target erosion areas, a rf induced negative substrate bias voltage of -100 V, a substrate temperature of 350 degrees C, and a total pressure of 0.5 Pa were used in the depositions. The corresponding discharge and deposition characteristics (such as the ion-to-film-forming particle flux ratio, ion energy per deposited atom, and deposition rate) are presented to understand complex relationships between process parameters and film characteristics. Films deposited under optimized conditions (B4C-Si target, 50% N-2+50% Ar gas mixture), possessing a composition (in at. %).

Název v anglickém jazyce

Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 degrees C

Popis výsledku anglicky

Novel quaternary Si-B-C-N materials are becoming increasingly attractive because of their possible high-temperature and harsh-environment applications. In the present work, amorphous Si-B-C-N films were deposited on Si and SiC substrates by reactive dc magnetron cosputtering using a single C-Si -B or B4C-Si target in nitrogen-argon gas mixtures. A fixed 75% Si fraction in the target erosion areas, a rf induced negative substrate bias voltage of -100 V, a substrate temperature of 350 degrees C, and a total pressure of 0.5 Pa were used in the depositions. The corresponding discharge and deposition characteristics (such as the ion-to-film-forming particle flux ratio, ion energy per deposited atom, and deposition rate) are presented to understand complex relationships between process parameters and film characteristics. Films deposited under optimized conditions (B4C-Si target, 50% N-2+50% Ar gas mixture), possessing a composition (in at. %).

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films

ISSN

0734-2101

e-ISSN

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Svazek periodika

26

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

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Kód UT WoS článku

000259296000001

EID výsledku v databázi Scopus

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