A phenomenological equilibrium model applicable to high-power pulsed magnetron sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F10%3A00503516" target="_blank" >RIV/49777513:23520/10:00503516 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

A phenomenological equilibrium model applicable to high-power pulsed magnetron sputtering

Popis výsledku v původním jazyce

We present a phenomenological equilibrium model applicable to high-power pulsed dc magnetron sputtering with relatively long steady-state discharge regimes established during pulses. The model makes it possible to calculate the normalized rate coefficient (determining the deposition rate of films per target power density), and the ionized fraction of target material atoms in the flux onto the substrate, as functions of the magnetron voltage and the fraction of target material ions in the total ion fluxonto the target (being related to an applied target power density). We used this model to clarify the large differences between the corresponding deposition characteristics of copper and titanium measured by us during high-power pulsed dc magnetron sputtering of the two materials. We investigated the effects of higher losses of the target material ions to chamber walls and of reduced additional ionization in the plasma bulk in the magnetron system with a weaker magnetic confinement.

Název v anglickém jazyce

A phenomenological equilibrium model applicable to high-power pulsed magnetron sputtering

Popis výsledku anglicky

We present a phenomenological equilibrium model applicable to high-power pulsed dc magnetron sputtering with relatively long steady-state discharge regimes established during pulses. The model makes it possible to calculate the normalized rate coefficient (determining the deposition rate of films per target power density), and the ionized fraction of target material atoms in the flux onto the substrate, as functions of the magnetron voltage and the fraction of target material ions in the total ion fluxonto the target (being related to an applied target power density). We used this model to clarify the large differences between the corresponding deposition characteristics of copper and titanium measured by us during high-power pulsed dc magnetron sputtering of the two materials. We investigated the effects of higher losses of the target material ions to chamber walls and of reduced additional ionization in the plasma bulk in the magnetron system with a weaker magnetic confinement.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Plasma Sources Science and Technology

ISSN

0963-0252

e-ISSN

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Svazek periodika

19

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

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Kód UT WoS článku

000284689600010

EID výsledku v databázi Scopus

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