Effect of the voltage pulse characteristics on high-power impulse magnetron sputtering of copper

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F13%3A43916989" target="_blank" >RIV/49777513:23520/13:43916989 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/0963-0252/22/1/015009" target="_blank" >http://dx.doi.org/10.1088/0963-0252/22/1/015009</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0963-0252/22/1/015009" target="_blank" >10.1088/0963-0252/22/1/015009</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of the voltage pulse characteristics on high-power impulse magnetron sputtering of copper

Popis výsledku v původním jazyce

We present a model analysis of a high-power impulse magnetron sputtering of copper. A non-stationary two-zone model was used to calculate the deposition rate and the ionized fraction of sputtered copper atoms in the flux onto the substrate for various pulse lengths (20 ? 400 microseconds), pulse shapes (a fixed target voltage of 900 V and stepwise ascending (800 ? 1000 V) or descending (1000 ? 800 V) target voltages), repetition frequencies (100 ? 2000 Hz) and magnetic field strengths in front of the target (350 ? 450 G) at an argon pressure of 1 Pa. We show that sufficiently long pulses (at least 100 microseconds) which allow for the build-up of a high density plasma in front of the target (diameter of 50 mm) are necessary to achieve high target powerdensities in a pulse and consequently, high degrees of ionization of the sputtered atoms. However, the high degree of ionization of the sputtered copper atoms leads necessarily to lower deposition rates when compared to the dc magnetron

Název v anglickém jazyce

Effect of the voltage pulse characteristics on high-power impulse magnetron sputtering of copper

Popis výsledku anglicky

We present a model analysis of a high-power impulse magnetron sputtering of copper. A non-stationary two-zone model was used to calculate the deposition rate and the ionized fraction of sputtered copper atoms in the flux onto the substrate for various pulse lengths (20 ? 400 microseconds), pulse shapes (a fixed target voltage of 900 V and stepwise ascending (800 ? 1000 V) or descending (1000 ? 800 V) target voltages), repetition frequencies (100 ? 2000 Hz) and magnetic field strengths in front of the target (350 ? 450 G) at an argon pressure of 1 Pa. We show that sufficiently long pulses (at least 100 microseconds) which allow for the build-up of a high density plasma in front of the target (diameter of 50 mm) are necessary to achieve high target powerdensities in a pulse and consequently, high degrees of ionization of the sputtered atoms. However, the high degree of ionization of the sputtered copper atoms leads necessarily to lower deposition rates when compared to the dc magnetron

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

—

Projekt

<a href="/cs/project/OC10045" target="_blank" >OC10045: Nové plazmové zdroje pro depozici vrstev a modifikaci povrchů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

PLASMA SOURCES SCIENCE & TECHNOLOGY

ISSN

0963-0252

e-ISSN

—

Svazek periodika

2013

Číslo periodika v rámci svazku

22

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

015009-1-015009-9

Kód UT WoS článku

000314966300014

EID výsledku v databázi Scopus

—