High-Rate Reactive Deposition of Transparent Zirconium Dioxide Films Using High-Power Pulsed DC Magnetron Sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F11%3A43895686" target="_blank" >RIV/49777513:23520/11:43895686 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

High-Rate Reactive Deposition of Transparent Zirconium Dioxide Films Using High-Power Pulsed DC Magnetron Sputtering

Popis výsledku v původním jazyce

High-power pulsed dc magnetron sputtering with an effective reactive gas flow control, developed by us, was used for the reactive deposition of transparent zirconium dioxide films. The depositions were performed using a strongly unbalanced magnetron witha planar zirconium target of 100 mm diameter in argon-oxygen gas mixtures at the argon pressure of 2 Pa. The repetition frequency was 500 Hz at duty cycles ranging from 2.5% to 10%. The substrate temperatures were less than 300 degrees of Celsius duringthe depositions of films on a floating substrate at the distance of 100 mm from the target. The increase in the average target power density from 5 to 100 watts per square centimeter in a period at the same duty cycle of 10% resulted in a rapid rise inthe deposition rate from 11 nm/min to 73 nm/min.

Název v anglickém jazyce

High-Rate Reactive Deposition of Transparent Zirconium Dioxide Films Using High-Power Pulsed DC Magnetron Sputtering

Popis výsledku anglicky

High-power pulsed dc magnetron sputtering with an effective reactive gas flow control, developed by us, was used for the reactive deposition of transparent zirconium dioxide films. The depositions were performed using a strongly unbalanced magnetron witha planar zirconium target of 100 mm diameter in argon-oxygen gas mixtures at the argon pressure of 2 Pa. The repetition frequency was 500 Hz at duty cycles ranging from 2.5% to 10%. The substrate temperatures were less than 300 degrees of Celsius duringthe depositions of films on a floating substrate at the distance of 100 mm from the target. The increase in the average target power density from 5 to 100 watts per square centimeter in a period at the same duty cycle of 10% resulted in a rapid rise inthe deposition rate from 11 nm/min to 73 nm/min.

Druh

O - Ostatní výsledky

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

<a href="/cs/project/OC10045" target="_blank" >OC10045: Nové plazmové zdroje pro depozici vrstev a modifikaci povrchů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů