Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F16%3A43930204" target="_blank" >RIV/49777513:23520/16:43930204 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2016.10.059" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2016.10.059</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2016.10.059" target="_blank" >10.1016/j.tsf.2016.10.059</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control

Popis výsledku v původním jazyce

Reactive high-power impulse magnetron sputtering was used to deposit HfO2 films on Si substrates using a voltage pulse duration, t1, from 100 to 200 ?s and an deposition-averaged target power density from 7.2 to 54 W/cm^2. The effects of these processing parameters on the microstructure and properties of the films were studied by atomic force microscopy, nano-indentation, X-ray diffraction, electron diffraction and high-resolution transmission electron microscopy. All films were found to be composed of an interlayer next to the Si interface followed by a nano-columnar structure layer. A reduction in <Sd> caused an increase in the interlayer thickness and a decrease in the width of the nano-columnar structures from ~46 nm to ~21 nm. Films prepared with larger t1 = 200 ?s have a monoclinic HfO2 structure and that with smaller t1 = 100 ?s exhibits a mixture of monoclinic and orthorhombic HfO2. A high hardness of 17.0-17.6 GPa was shown for films with a monoclinic HfO2 structure. The films exhibited a refractive index of 2.02-2.11 and an extinction coefficient between 0.0001 and 0.001 (both at a wavelength of 550 nm).

Název v anglickém jazyce

Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control

Popis výsledku anglicky

Reactive high-power impulse magnetron sputtering was used to deposit HfO2 films on Si substrates using a voltage pulse duration, t1, from 100 to 200 ?s and an deposition-averaged target power density from 7.2 to 54 W/cm^2. The effects of these processing parameters on the microstructure and properties of the films were studied by atomic force microscopy, nano-indentation, X-ray diffraction, electron diffraction and high-resolution transmission electron microscopy. All films were found to be composed of an interlayer next to the Si interface followed by a nano-columnar structure layer. A reduction in <Sd> caused an increase in the interlayer thickness and a decrease in the width of the nano-columnar structures from ~46 nm to ~21 nm. Films prepared with larger t1 = 200 ?s have a monoclinic HfO2 structure and that with smaller t1 = 100 ?s exhibits a mixture of monoclinic and orthorhombic HfO2. A high hardness of 17.0-17.6 GPa was shown for films with a monoclinic HfO2 structure. The films exhibited a refractive index of 2.02-2.11 and an extinction coefficient between 0.0001 and 0.001 (both at a wavelength of 550 nm).

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JJ - Ostatní materiály

OECD FORD obor

—

Projekt

<a href="/cs/project/GA14-03875S" target="_blank" >GA14-03875S: Nanostrukturní multifunkční povlaky připravené užitím silně ionizovaného pulzního plazmatu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

619

Číslo periodika v rámci svazku

30 November 2016

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

11

Strana od-do

239-249

Kód UT WoS článku

000389610900036

EID výsledku v databázi Scopus

2-s2.0-84998692970